Datasheet > DAN222

DAN222

更新时间： 2023-12-06 20:08:25

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1231K
描述
SOT-523

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中文翻译

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数据手册

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DAN222 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-523 Plastic-Encapsulate Diodes

DAN222

SWITCHING DIODE

SOT-523

FEATURES:

Four types of packaging are available

High speed

Suitable for high packing density layout

High reliability

MARKING: N

Maximum Ratings @Ta=25℃

Symbol

V_RM

Limit

Unit

Parameter

Non-Repetitive Peak Reverse Voltage

DC Blocking Voltage

V_R

Forward Continuous Current

I_FM

300

Non-Repetitive Peak

I_FSM

Forward Surge Current @t=8.3ms

2.0

100

150

833

Average Rectified Output Current

Power Dissipation

I_O

P_D

Thermal resistance From Junction to ambient

R_θJA

℃/W

T_J,T_STG

-55~+150

Operation Junction and Storage Temperature Range

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test

conditions

I_R= 100μA

Min

Max

Unit

Reverse breakdown voltage

Reverse voltage leakage current

V_R=70V

0.1

μA

Forward voltage

V_F

I_F=100mA

1.2

3.5

Diode capacitance

C_D

t_rr

V_R=0, f=1MHz

Reverse recovery time

V_R=6V, I_F=I_R=5mA

www.jscj-elec.com

Rev. - 2.0

12 3 4

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