Datasheet > DAN217N3

DAN217N3

更新时间： 2024-09-26 03:28:43

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		二极管开关
页数	文件大小	规格书
3页	101K
描述
HIGH-SPEED SWITCHING DIODE

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数据手册

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DAN217N3 数据手册

Spec. No. : C303N3C

Issued Date : 2002.12.18

CYStech Electronics Corp.

Revised Date :

Page No. : 1/3

. .

DAN217N3

HIGH-SPEED SWITCHING DIODE

Description

The DAN217N3 consists of two diodes in a plastic surface mount package. The diodes are

connected in series and the unit is designed for high-speed switching application in hybrid thick

and thin-film circuits.

Features

• Small SMD Package (SOT-23)

• Ultra-high Speed

• Low Forward Voltage

• Fast Reverse Recovery Time

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -65 ~ +150 °C

Junction Temperature.................................................................................................... +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................ 250 mW

• Maximum Voltages and Currents (Ta=25°C)

Reverse Voltage .................................................................................................................. 70 V

Repetitive Reverse Voltage ................................................................................................. 70 V

Forward Current ............................................................................................................. 150 mA

Repetitive Forward Current ............................................................................................ 500 mA

Forward Surge Current (1ms)....................................................................................... 1000 mA

Characteristics (Ta=25°C)

Characteristic

Reverse Breakdown Voltage

Symbol

Condition

IR=100uA

Min

Max

Unit

V(BR)

VF(1)

VF(2)

VF(3)

VF(4)

IF=1mA

715

855

1000

1250

2.5

IF=10mA

IF=50mA

Forward Voltage

IF=150mA

Reverse Current

Total Capacitance

VR=70

VR=0, f=1MHz

IF=IR=10mA, RL=100Ω

measured at IR=1mA

1.5

Reverse Recovery Time

Trr

DAN217N3

CYStek Product Specification

12 3

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