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DAN202U

更新时间: 2024-11-21 18:10:03
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
5页 205K
描述
Reverse Voltage Vr : 80 V;Forward Current Io : 100 mA;Forward Voltage Vf : 1.2 V;Reverse Current Ir : 0.1 uA;Recovery Time : 4 ns;Package / Case : SOT-323;Mounting Style : SMT/SMD

DAN202U 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.63
二极管类型:RECTIFIER DIODEBase Number Matches:1

DAN202U 数据手册

 浏览型号DAN202U的Datasheet PDF文件第2页浏览型号DAN202U的Datasheet PDF文件第3页浏览型号DAN202U的Datasheet PDF文件第4页浏览型号DAN202U的Datasheet PDF文件第5页 
DAN202U  
SWITCHING DIODE  
SOT-323  
FEATURES:  
Four types of packaging are available  
High speed  
Suitable for high packing density layout  
High reliability  
1
2
3
MARKING:N  
N
Soliddot = Green molding compound device,  
if none,the normal device.  
N
Maximum Ratings @Ta=25℃  
Symbol  
Limit  
80  
Unit  
Parameter  
Non-Repetitive Peak Reverse Voltage  
DC Blocking Voltage  
VRM  
VR  
V
80  
V
Forward Continuous Current  
IFM  
mA  
300  
Non-Repetitive Peak  
IFSM  
Forward Surge Current @t=8.3ms  
2.0  
100  
A
Average Rectified Output Current  
Power Dissipation  
IO  
PD  
mA  
mW  
200  
Thermal resistance From Junction to ambient  
RθJA  
625  
/W  
150  
Junction Temperature  
TJ  
Storage Temperature Range  
TSTG  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)  
IR  
Test conditions  
IR= 100μA  
Min  
Max  
Unit  
Reverse breakdown voltage  
Reverse voltage leakage current  
80  
V
VR=70V  
0.1  
μA  
Forward voltage  
VF  
V
IF=100mA  
1.2  
3.5  
4
Diode capacitance  
CD  
trr  
VR=6V, f=1MHz  
VR=6V, IF=5mA  
pF  
ns  
Reverse recovery time  
2016-07  
REV: O2  

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