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DS1211

更新时间： 2024-02-27 14:58:01

品牌	Logo	应用领域
达拉斯 - DALLAS		微控制器和处理器外围集成电路 uCs集成电路 uPs集成电路光电二极管
页数	文件大小	规格书
1页	17K
描述
Nonvolatile Controller x 8 Chip

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技术参数
数据手册

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DS1211 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.62
Is Samacsys：	N	JESD-30 代码：	R-PDSO-G20
JESD-609代码：	e0	端子数量：	20
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	认证状态：	Not Qualified
标称供电电压：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子位置：	DUAL	uPs/uCs/外围集成电路类型：	MICROPROCESSOR CIRCUIT
Base Number Matches：	1

DS1211 数据手册

DS1211

Nonvolatile Controller x 8 Chip

www.dalsemi.com

FEATURES

PIN ASSIGNMENT

ꢀ Converts full CMOS RAMs into nonvolatile

memories

VBAT1

VCCI

VBAT2

VCCO

ꢀ Unconditionally write protects when V_CCis

out of tolerance

ꢀ Automatically switches to battery when

power-fail occurs

ꢀ 3 to 8 decoder provides control for up to eight

CMOS RAMs

ꢀ Consumes less than 100 nA of battery current

ꢀ Tests battery condition on power-up

ꢀ Provides for redundant batteries

ꢀ Power-fail signal can be used to interrupt

processor on power failure

ꢀ Optional 5% or 10% power-fail detection

ꢀ Optional 20-pin SOIC surface mount package

ꢀ Optional industrial temperature range of

-40°C to +85°C

TOL

CE0

VBAT1

VCCI

VBAT2

CE1

CE2

CE7

CE6

VCCO

TOL

CE0

CE1

CE2

CE3

CE7

CE6

CE4

CE5

CE4

CE5

GND

20-Pin DIP (300-mil)

See Mech. Drawings

Section

20-Pin SOIC (300-mil)

See Mech. Drawings

Section

PIN DESCRIPTION

A, B, C

- Address Inputs

- Chip Enable Input

CE0 - CE7

GND

- Chip Enable Outputs

- Ground

V_BAT1

V_BAT2

TOL

- + Battery 1

- + Battery 2

- Power Supply Tolerance

- +5V Supply

V_CCI

V_CC0

- RAM Supply

- Power-fail

- No Connection

DESCRIPTION

The DS1211 Nonvolatile Controller x 8 Chip is a CMOS circuit which solves the application problem of

converting CMOS RAMs into nonvolatile memories. Incoming power is monitored for an out-of-

tolerance condition. When such a condition is detected, the chip enables are inhibited to accomplish write

protection and the battery is switched on to supply RAMs with uninterrupted power. Special circuitry

uses a low-leakage CMOS process which affords precise voltage detection at extremely low battery

consumption.

By combining the DS1211 nonvolatile controller/decoder chip and lithium batteries, nonvolatile RAM

operation can be achieved for up to eight CMOS memories.

See the data sheet for the DS1212 Nonvolatile Controller x 16 Chip for electrical specifications and

operation.

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与DS1211相关器件

型号	品牌	描述	获取价格	数据表
DS1211-IND	DALLAS	Power Management Circuit, CMOS, PDIP20,	获取价格
DS1211N	DALLAS	Microprocessor Circuit, CMOS, PDIP20,	获取价格
DS1211-N	ETC	Nonvolatile Controller	获取价格
DS1211S	ETC	Nonvolatile Controller	获取价格
DS1211SN	DALLAS	Microprocessor Circuit, CMOS, PDSO20,	获取价格
DS1212	DALLAS	Nonvolatile Controller x 16 Chip	获取价格