Datasheet > D882Y(TO-251)

D882Y(TO-251)

更新时间： 2024-01-03 10:53:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	319K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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D882Y(TO-251) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	最大集电极电流 (IC)：	3 A
配置：	Single	最小直流电流增益 (hFE)：	160
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1.25 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	50 MHz
Base Number Matches：	1

D882Y(TO-251) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251 Plastic-Encapsulate Transistors

D882 TRANSISTOR (NPN)

TO-251

FEATURES

Power dissipation

1. EMITTER

2. COLLECTOR

3． BASE

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

1.25

150

-55-150

℃

T_J

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

I_C= 100μA, I_E=0

I_C= 10mA, I_B=0

I_E= 100μA, I_C=0

V_CB= 40 V, I_E=0

V_CE= 30 V, I_B=0

V_EB= 6 V, I_C=0

µA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE= 2 V, I_C= 1A

I_C= 2A, I_B= 0.2 A

400

0.5

1.5

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_{CE (sat)}

V_{BE (sat)}

V_CE= 5V, I_C=0.1A

f =10MHz

Transition frequency

f_T

MHz

CLASSIFICATION OF h_FE

Rank

200-400

Range

60-120

100-200

160-320

A,Jun,2011

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