是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SIP |
包装说明: | PLASTIC, TO-126, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.27 | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | MATTE TIN | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 50 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
D882S | SECOS |
获取价格 |
NPN Plastic Encapsulated Transistor | |
D882S | CJ |
获取价格 |
TO-92 | |
D882SS | UTC |
获取价格 |
NPN EPITAXIAL SILICON TRANSISTOR | |
D882SS_09 | UTC |
获取价格 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
D882SSE | UTC |
获取价格 |
暂无描述 | |
D882SSG-P-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN F | |
D882SSG-X-AE3-R | UTC |
获取价格 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
D882SSL-E-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE | |
D882SSL-P-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE | |
D882SSL-X-AE3-R | UTC |
获取价格 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |