Datasheet > D882

D882

更新时间： 2024-10-05 18:09:27

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	554K
描述
SOT-89

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数据手册

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D882 数据手册

D882

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to B772

 Large Power Dissipation

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

500

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

250

150

Storage Temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=100uA，I_E=0

V(BR)CBO

V(BR)CEO

V(BR)EBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=10mA，I_B=0

I_E=100uA，I_C=0

V_CB=40V, I_E=0

V_CE=30V, I_B=0

I_CBO

I_CEO

Collector cut-off current

Emitter cut-off current

I_EBO

uA V_EB=6V, I_C=0

V_CE=2V, I_C=1A

h_FE1

400

DC current gain

h_FE2

V_CE=2V, I_C=100mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

0.5

1.5

I_C=2A，I_B=0.2A

V_CE=5V, I_C=0.1A, f=10

MHz

f_T

MHz

CLASSIFICATION OF h_FE

Rank

200-400

Range

60-120

100-200

160-320

Marking

D882

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