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D5V0L2B3SO-7 PDF预览

D5V0L2B3SO-7

更新时间: 2024-10-31 17:15:39
品牌 Logo 应用领域
友台半导体 - UMW 脉冲
页数 文件大小 规格书
4页 250K
描述
反向截止电压(Vrwm):5v;极性/通道数(Channel):2-Line,Bidirectional;击穿电压(VBR):6V;峰值脉冲电流(Ipp):1A;最大钳位电压(Vc):7.0V;电容(Cj):15pF

D5V0L2B3SO-7 数据手册

 浏览型号D5V0L2B3SO-7的Datasheet PDF文件第2页浏览型号D5V0L2B3SO-7的Datasheet PDF文件第3页浏览型号D5V0L2B3SO-7的Datasheet PDF文件第4页 
R
UMW  
D5V0L2B3SO-7  
1
2
Features  
Air – ±30kV, Contact – ±30kV  
2 Channels of Bi-Directional ESD Protection  
Low Channel Input Capacitance  
Typically Used in Cellular Handsets, Portable Electronics,  
Communication Systems, Computers and Peripherals  
3
Device Schematic  
Mechanical Data  
Case: SOT-23  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Maximum Ratings@TA = 25°C unless otherwise specified  
Characteristic Symbol  
Peak Pulse Power Dissipation  
Value  
84  
Unit  
W
A
Conditions  
8/20μs, Per in Fig. 1  
8/20μs, Per in Fig. 1  
Standard IEC 61000-4-2  
PPP  
IPP  
Peak Pulse Current  
6
ESD Protection – Contact Discharge  
ESD Protection – Air Discharge  
±30  
±30  
kV  
VESD_Contac  
t
kV  
Standard IEC 61000-4-2  
VESD_Ai  
r
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
Unit  
Package Power Dissipation (Note 5)  
Thermal Resistance, Junction to Ambient (Note 5)  
Operating Junction Temperature Range  
Storage Temperature Range  
300  
417  
mW  
°C/W  
JA  
-65 to +150  
-65 to +150  
TJ  
°C  
°C  
TSTG  
www.umw-ic.com  
UTD Semiconductor Co.,Limited  
1

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