Datasheet > D4SB80

D4SB80

更新时间： 2023-12-06 20:03:32

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Bridge Rectifiers

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D4SB80 数据手册

www.eicsemi.com

SILICON BRIDGE RECTIFIER

D4SB80

RBV4

0.173 (4.4)

0.150 (3.8)

0.203 (5.16)

0.189 (4.80)

PRV : 800 Volts

Io : 4.0 Amperes

0.996 (25.3)

0.972 (24.7)

FEATURES :

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

~ ~

0.075 (1.9)

0.060 (1.5)

0.043 (1.1)

0.035 (0.9)

0.153 (3.9)

0.134 (3.4)

0.303 (7.7)

0.287 (7.3)

MECHANICAL DATA :

0.031 (0.8)

0.023 (0.6)

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

Dimensions in inches and

* Weight : 4.28 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (If not specified Tc = 25 °C)

RATING

VALUE

SYMBOL

UNIT

V_RM

Maximum Reverse Voltage

Maximum Average Rectified Forward With heatsink Tc = 108 °C

Current (50 Hz sine wave, R-load) Without heatsink Ta = 25 °C

800

4.0

2.3

I_F(AV)

Maximum Peak Surge Forward Current, 50Hz sine wave,

Non-repetitive 1 cycle peak value, T_J= 25 °C

Maximum Forward Voltage at I_F= 2.0 A **

I_FSM

150

V_F

I_R

0.95

Maximum Reverse Current at V_R= V_RM**

μA

R_ӨJC

R_ӨJL

R_ӨJA

T_J

Thermal Resistance, Junction to Case (With heatsink)

Thermal Resistance, Junction to Lead (Without heatsink)

Thermal Resistance, Junction to Ambient (Without heatsink)

Operating Junction Temperature Range

5.5

6.0

°C/W

°C

150

T_STG

Storage Temperature Range

- 40 to + 150

°C

** Pulse measurement, Rating of per diode.

Page 1 of 2

Rev. 01 : January 14, 2013

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