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D4709N20T PDF预览

D4709N20T

更新时间: 2024-11-05 20:10:35
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
23页 232K
描述
Rectifier Diode, 1 Phase, 1 Element, 5.348A, 2000V V(RRM), Silicon,

D4709N20T 技术参数

生命周期:Obsolete包装说明:O-CXDB-X3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.75
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.12 VJESD-30 代码:O-CXDB-X3
JESD-609代码:e3最大非重复峰值正向电流:60 A
元件数量:1相数:1
端子数量:3最高工作温度:160 °C
最大输出电流:5.348 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大重复峰值反向电压:2000 V
子类别:Rectifier Diodes表面贴装:YES
端子面层:MATTE TIN端子形式:UNSPECIFIED
端子位置:UNSPECIFIEDBase Number Matches:1

D4709N20T 数据手册

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Technische Information / Technical Information  
Netz Gleichrichterdiode  
Rectifier Diode  
N
D 4709 N 20...28  
Elektrische Eigenschaften / Electrical properties  
Vorläufige Daten  
Preliminary Data  
Höchstzulässige Werte / Maximum rated values  
Periodische Spitzensperrspannung  
repetitive peak forward reverse voltage  
Tvj = - 40°C...Tvj max  
Tvj = + 25°C...Tvj max  
VRRM  
2000  
2400  
2200  
2600  
2800  
V
V
V
Stoßspitzensperrspannung  
VRSM  
2100  
2500  
2300  
2700  
2900  
V
V
V
non-repetitive peak reverse voltage  
Durchlaßstrom-Grenzeffektivwert  
RMS forward current  
IFRMSM  
IFAVM  
IFSM  
8.400  
A
Dauergrenzstrom  
TC = 100 °C  
TC = 87 °C  
4.700  
5.348  
A
A
mean forward current  
Stoßstrom-Grenzwert  
surge foward current  
Tvj = 25°C, tp = 10 ms  
Tvj = Tvj max, tp = 10 ms  
71.000  
60.000  
A
A
A²s*103  
A²s*103  
Grenzlastintegral  
I²t-value  
Tvj = 25°C, tp = 10ms  
Tvj = Tvj max, tp = 10ms  
I²t  
25.205  
18.000  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
forward voltage  
Tvj = Tvj max  
Tvj = Tvj max  
,
,
iF = 11,0 kA  
iF = 4,0 kA  
vF  
vF  
max.  
max.  
1,65  
1,12  
V
V
Schleusenspannung  
threshold voltage  
Tvj = Tvj max  
V(TO)  
0,83  
0,68  
V
V
Low-level iTmax  
£
£
5000 A  
5000 A  
V(TO) 2  
mW  
mW  
Ersatzwiderstand  
Tvj = Tvj max  
rT  
0,07  
forward slope resistance  
Low-level iTmax  
rT 2  
0,104  
Tvj = Tvj max  
Durchlaßkennlinie  
on-state voltage  
A= 1,403E+00  
B=  
C= -1,405E-01  
D= 1,255E-02  
2,111E-05  
vT = A + B ×iT + C × Ln(iT + 1) + D × iT  
Sperrstrom  
Tvj = Tvj max  
,
vR = VRRM  
iR  
max.  
200  
mA  
reverse current  
Thermische Eigenschaften / Thermal properties  
Innerer Wärmewiderstand  
Kühlfläche / cooling surface  
RthJC  
beidseitig / two-sided,Q=180°sin  
thermal resitance, junction to case  
max.  
max.  
max.  
max.  
max.  
max.  
0,0080  
0,0073  
0,0147  
0,0136  
0,0174  
0,0160  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
beidseitig / two-sided, DC  
Anode / anode, Q =180°sin  
Anode / anode, DC  
Kathode / cathode, Q =180°sin  
Kathode / cathode, DC  
Übergangs- Wärmewiderstand  
Kühlfläche / cooling surface  
beidseitig / two-sided  
RthJK  
thermal resitance, case to heatsink  
max.  
max.  
0,0025  
0,0050  
°C/W  
°C/W  
einseitig / single-sided  
Höchstzulässige Sperrschichttemperatur  
max. junction temperature  
Tvj max  
160  
°C  
Betriebstemperatur  
Tc op  
Tstg  
-40...+160  
-40...+150  
°C  
°C  
operating temperature  
Lagertemperatur  
storage temperature  
prepared by: K.-A. Rüther  
approved by: J. Novotny  
data of publication: 00-10-23  
revision: 1  
BIP AM  
A26/00  
Seite/page 1  

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