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D45C12G PDF预览

D45C12G

更新时间： 2024-02-28 21:58:32
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
3页 74K
描述
Complementary Silicon Power Transistor

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中文翻译

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D45C12G 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：not_compliant风险等级：5.81
外壳连接：COLLECTOR最大集电极电流 (IC)：4 A
集电极-发射极最大电压：80 V配置：SINGLE
最小直流电流增益 (hFE)：20JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：140 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：PNP最大功率耗散 (Abs)：30 W
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：40 MHz
Base Number Matches：1

D45C12G 数据手册

 浏览型号D45C12G的Datasheet PDF文件第2页浏览型号D45C12G的Datasheet PDF文件第3页 
D45C12 (PNP),  
D44C12 (NPN)  
Complementary Silicon  
Power Transistor  
The D45C12 and D44C12 areꢀfor general purpose driver or  
medium power output stages in CW or switching applications.  
http://onsemi.com  
Features  
4.0 AMPERE COMPLEMENTARY  
SILICON POWER  
•ꢁLow Collector-Emitter Saturation Voltage - 0.5 V (Max)  
•ꢁHigh f for Good Frequency Response  
t
•ꢁLow Leakage Current  
•ꢁPb-Free Packages are Available*  
TRANSISTORS 80 VOLTS  
4
MAXIMUM RATINGS  
Rating  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter Base Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
TO-220AB  
CASE 221A  
STYLE 1  
V
CEO  
VCES  
90  
V
EB  
5.0  
1
2
3
Collector Current - Continuous  
Peak (Note 1)  
I
C
4.0  
6.0  
Total Power Dissipation @ T = 25°C  
P
D
30  
1.67  
W
W/°C  
C
Total Power Dissipation @ T = 25°C  
A
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Operating and Storage Junction  
Temperature Range  
T , T  
J
-ꢁ55 to 150  
°C  
stg  
4
Collector  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
THERMAL CHARACTERISTICS  
D4xC12G  
AYWW  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction-to-Case  
R
4.2  
°C/W  
q
JC  
1
Base  
3
Emitter  
Thermal Resistance,  
Junction-to-Ambient  
R
75  
°C/W  
°C  
q
JA  
2
Collector  
Maximum Lead Temperature for Soldering  
Purposes: 1/8 in from Case for 5 Sec  
T
275  
L
x
= 4 or 5  
A
= Assembly Location  
= Year  
= Work Week  
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.  
Y
WW  
G
= Pb-Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
November, 2007 - Rev. 2  
1
Publication Order Number:  
D45C12/D  
 
123

中文翻译

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D45C12G 替代型号

型号 品牌 替代类型 描述 数据表
D45C12 ONSEMI

类似代替

 Complementary Silicon Power Transistor
D45C11 FAIRCHILD

功能相似

 PNP Current Driver Transistor

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D45C12L MOTOROLA

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 		Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
D45C12N MOTOROLA

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 		4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
D45C12S MOTOROLA

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 		4A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
D45C12U MOTOROLA

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 		4A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
D45C12UA MOTOROLA

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 		Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
D45C12W MOTOROLA

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 		Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
D45C1-6200 RENESAS

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 		Power Bipolar Transistor, 4A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
D45C1-6265 RENESAS

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 		4A, 30V, PNP, Si, POWER TRANSISTOR, TO-220AB
D45C1-DR6259 RENESAS

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 		4A, 30V, PNP, Si, POWER TRANSISTOR, TO-220AB
D45C1-DR6269 RENESAS

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 		Power Bipolar Transistor, 4A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti

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