Datasheet > D44VH10BU

D44VH10BU

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
59页	339K
描述
15A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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D44VH10BU 数据手册

SEMICONDUCTOR TECHNICAL DATA

These complementary silicon power transistors are designed for high–speed

switching applications, such as switching regulators and high frequency inverters.

The devices are also well–suited for drivers for high power switching circuits.

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80 VOLTS

•

Fast Switching — t = 90 ns (Max)

Key Parameters Specified @ 100 C

Low Collector–Emitter Saturation Voltage —

= 1.0 V (Max) @ 8.0 A

CE(sat)

Complementary Pairs Simplify Circuit Designs

83 WATTS

•

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter Base Voltage

CEO

100

7.0

CEV

Collector Current — Continuous

— Peak (1)

Total Power Dissipation @ T = 25 C

Derate above 25 C

Watts

W/ C

0.67

T , T

–55 to 150

Operating and Storage Junction Temperature Range

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.5

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

θJC

62.5

275

θJA

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Width

6.0 ms, Duty Cycle

50%.

NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.

3–413

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...59

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