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D44TD3

更新时间: 2024-11-04 06:52:11
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 107K
描述
isc Silicon NPN Power Transistors

D44TD3 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

D44TD3 数据手册

 浏览型号D44TD3的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
D44TD3/4/5  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 300V(Min)- D44TD3  
= 350V(Min)- D44TD4  
= 400V(Min)- D44TD5  
·High Switching Speed  
·Low Saturation Voltage  
APPLICATIONS  
·Designed for switching regulators, high resolution deflection  
circuits, inverters and motor drivers.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
400  
500  
600  
300  
350  
400  
5
UNIT  
D44TD3  
D44TD4  
D44TD5  
D44TD3  
D44TD4  
D44TD5  
Collector-Emitter  
VCEV  
V
Voltage  
Collector-Emitter  
Voltage  
VCEO  
V
VEBO  
IC  
Emitter-Base Voltage  
V
A
Collector Current-Continuous  
Collector Current-Peak  
4
ICM  
PC  
8
A
Collector Power Dissipation  
50  
W
@ TC=25℃  
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
1.56  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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