Datasheet > D44T4

D44T4

更新时间： 2024-11-04 06:52:11

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	109K
描述
isc Silicon NPN Power Transistors

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中文翻译

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数据手册

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D44T4 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

D44T3/4

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 300V (Min)

·High Switching Speed

·Low Saturation Voltage

APPLICATIONS

·Designed for general purpose amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CES

V_CEO

V_EBO

I_C

PARAMETER

VALUE

400

300

UNIT

Collector-Emitter Voltage

V_BE=0

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

I_CM

I_B

0.5

Collector Power Dissipation

@ T_C=25℃

P_C

31.2

150

-55~150

℃

T_J

Junction Temperature

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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