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D44Q1 PDF预览

D44Q1

更新时间: 2024-11-14 06:52:11
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 115K
描述
isc Silicon NPN Power Transistors

D44Q1 数据手册

 浏览型号D44Q1的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
D44Q1/3/5  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 125V(Min)- D44Q1  
= 175V(Min)- D44Q3  
= 225V(Min)- D44Q5  
·High Switching Speed  
·Low Saturation Voltage  
APPLICATIONS  
·Designed for linear and switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
200  
UNIT  
D44Q1  
D44Q3  
D44Q5  
D44Q1  
D44Q3  
D44Q5  
VCBO  
Collector-Base Voltage  
V
250  
300  
125  
VCEO  
Collector-Emitter Voltage  
V
175  
225  
VEBO  
IC  
Emitter-Base Voltage  
7
V
A
Collector Current-Continuous  
4
Collector Power Dissipation  
@ TC=25℃  
Collector Power Dissipation  
@ Ta=25℃  
PC  
31.25  
1.67  
150  
W
PC  
TJ  
Junction Temperature  
Storage Temperature Range  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
4
UNIT  
/W  
/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Rth j-c  
75  
Rth j-a  
isc Websitewww.iscsemi.cn  

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