D44H8G

更新时间： 2024-09-26 03:28:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管开关局域网
页数	文件大小	规格书
5页	68K
描述
Complementary Silicon Power Transistors

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中文翻译

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数据手册

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D44H8G 数据手册

D44H Series (NPN),

D45H Series (PNP)

Preferred Devices

Complementary Silicon

Power Transistors

These series of plastic, silicon NPN and PNP power transistors can

be used as general purpose power amplification and switching such as

output or driver stages in applications such as switching regulators,

converters and power amplifiers.

http://onsemi.com

10 AMP COMPLEMENTARY

SILICON POWER

Features

• Low Collector−Emitter Saturation Voltage

TRANSISTORS 60, 80 VOLTS

CE(sat)

= 1.0 V (Max) @ 8.0 A

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• Pb−Free Packages are Available*

MARKING

DIAGRAM

MAXIMUM RATINGS

TO−220AB

CASE 221A−09

Rating

Symbol

Value

Unit

D4xHyyG

AYWW

Collector−Emitter Voltage

D44H8, D45H8

Vdc

CEO

STYLE 1

D44H11, D45H11

Emitter Base Voltage

5.0

Vdc

Adc

D4xHyy = Device Code

x = 4 or 5

Collector Current

− Continuous

yy = 8 or 11

− Peak (Note 1)

= Assembly Location

= Year

Total Power Dissipation

= Work Week

= Pb−Free Package

@ T = 25°C

2.0

@ T = 25°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

ORDERING INFORMATION

†

50 Units/Rail

Device

Package

Shipping

THERMAL CHARACTERISTICS

Characteristic

D44H8

TO−220

Symbol

Max

1.8

Unit

_C/W

D44H8G

TO−220

(Pb−Free)

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

62.5

275

D44H11

TO−220

50 Units/Rail

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

D44H11G

TO−220

(Pb−Free)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

D45H8

TO−220

50 Units/Rail

D45H8G

TO−220

(Pb−Free)

1. Pulse Width v 6.0 ms, Duty Cycle v 50%.

D45H11

TO−220

50 Units/Rail

D45H11G

TO−220

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 9

D44H/D

12 3 4 5

中文翻译

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与D44H8G相关器件

型号	品牌	获取价格	描述	数据表
D44H8J69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
D44H8-J69Z	TI	获取价格	8A, 60V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
D44H8L	MOTOROLA	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
D44H8N	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H8S	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H8T	MOTOROLA	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
D44H8U	MOTOROLA	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
D44H8U2	MOTOROLA	获取价格	10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
D44H8UA	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H8W	MOTOROLA	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB

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