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D44H8BG PDF预览

D44H8BG

更新时间: 2024-11-04 13:07:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
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D44H8BG 数据手册

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Order this document  
by D44H/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . for general purpose power amplification and switching such as output or driver  
stages in applications such as switching regulators, converters and power amplifiers.  
*Motorola Preferred Device  
10 AMPERE  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
60, 80 VOLTS  
Low Collector–Emitter Saturation Voltage  
= 1.0 V (Max) @ 8.0 A  
Fast Switching Speeds  
V
CE(sat)  
Complementary Pairs Simplifies Designs  
MAXIMUM RATINGS  
D44H or D45H  
Rating  
Collector–Emitter Voltage  
Emitter Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Adc  
8
10, 11  
80  
V
CEO  
60  
V
EB  
5.0  
Collector Current — Continuous  
— Peak (1)  
I
C
10  
20  
Total Power Dissipation  
P
Watts  
C
D
@ T = 25 C  
50  
1.67  
C
@ T = 25 C  
A
CASE 221A–06  
TO–220AB  
Operating and Storage Junction  
Temperature Range  
T , T  
J
55 to 150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.5  
75  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
θJC  
θJA  
Maximum Lead Temperature for Soldering Purposes: 1/8from Case for 5 Seconds  
(1) Pulse Width 6.0 ms, Duty Cycle 50%.  
T
L
275  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
J
Characteristic  
Symbol  
Min  
Max  
Unit  
DC Current Gain  
D44H10  
D45H10  
h
FE  
35  
(V  
CE  
= 1.0 Vdc, I = 2.0 Adc)  
C
60  
20  
40  
D44H8,11  
D44H8,11  
(V  
CE  
= 1.0 Vdc, I = 4.0 Adc)  
D44H10  
D45H10  
C
D44H8,11  
D45H8,11  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995

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