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D44H8 PDF预览

D44H8

更新时间: 2024-11-03 22:40:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
4页 106K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

D44H8 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:PLASTIC, CASE 221A-09, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75Factory Lead Time:1 week
风险等级:5.25Is Samacsys:N
其他特性:LEADFORM OPTIONS ARE AVAILABLE外壳连接:COLLECTOR
最大集电极电流 (IC):10 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):50 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

D44H8 数据手册

 浏览型号D44H8的Datasheet PDF文件第2页浏览型号D44H8的Datasheet PDF文件第3页浏览型号D44H8的Datasheet PDF文件第4页 
Order this document  
by D44H/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . for general purpose power amplification and switching such as output or driver  
stages in applications such as switching regulators, converters and power amplifiers.  
*Motorola Preferred Device  
10 AMPERE  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
60, 80 VOLTS  
Low Collector–Emitter Saturation Voltage  
= 1.0 V (Max) @ 8.0 A  
Fast Switching Speeds  
V
CE(sat)  
Complementary Pairs Simplifies Designs  
MAXIMUM RATINGS  
D44H or D45H  
Rating  
Collector–Emitter Voltage  
Emitter Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Adc  
8
10, 11  
80  
V
CEO  
60  
V
EB  
5.0  
Collector Current — Continuous  
— Peak (1)  
I
C
10  
20  
Total Power Dissipation  
P
Watts  
C
D
@ T = 25 C  
50  
1.67  
C
@ T = 25 C  
A
CASE 221A–06  
TO–220AB  
Operating and Storage Junction  
Temperature Range  
T , T  
J
55 to 150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.5  
75  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
θJC  
θJA  
Maximum Lead Temperature for Soldering Purposes: 1/8from Case for 5 Seconds  
(1) Pulse Width 6.0 ms, Duty Cycle 50%.  
T
L
275  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
J
Characteristic  
Symbol  
Min  
Max  
Unit  
DC Current Gain  
D44H10  
D45H10  
h
FE  
35  
(V  
CE  
= 1.0 Vdc, I = 2.0 Adc)  
C
60  
20  
40  
D44H8,11  
D44H8,11  
(V  
CE  
= 1.0 Vdc, I = 4.0 Adc)  
D44H10  
D45H10  
C
D44H8,11  
D45H8,11  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995

D44H8 替代型号

型号 品牌 替代类型 描述 数据表
D44H8G ONSEMI

类似代替

Complementary Silicon Power Transistors
D44H8 FAIRCHILD

功能相似

NPN Power Amplifier
D44H8 STMICROELECTRONICS

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NPN SILICON POWER TRANSISTORS

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D44H816 MOTOROLA

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D44H8-6203 RENESAS

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D44H8A MOTOROLA

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D44H8AF MOTOROLA

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Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H8AJ ONSEMI

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10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
D44H8AJ MOTOROLA

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暂无描述
D44H8AK ONSEMI

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10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN