生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.73 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 10 A | 基于收集器的最大容量: | 130 pF |
集电极-发射极最大电压: | 40 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 1000 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 50 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | VCEsat-Max: | 2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
D44E1-DR6274 | RENESAS |
获取价格 |
10A, 40V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
D44E1-DR6280 | RENESAS |
获取价格 |
Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
D44E2 | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-220AB | |
D44E2-6203 | RENESAS |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
D44E2-6226 | RENESAS |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
D44E2-6255 | RENESAS |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
D44E2-6258 | RENESAS |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
D44E2-6263 | RENESAS |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
D44E2-DR6259 | RENESAS |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
D44E2-DR6260 | RENESAS |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB |