Datasheet > D44E1

D44E1

更新时间： 2023-12-06 20:01:46

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
18页	509K
描述
10A,40V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

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D44E1 数据手册

D44E1

D44E2

D44E3

www.centralsemi.com

SILICON

NPN DARLINGTON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR D44E series

devices are silicon NPN Darlington power transistors,

manufactured by the epitaxial base process, with

2 integrated resistors and 1 diode for stability and

protection. These devices are designed for switching

and output applications where high gain is desired.

MARKING: FULL PART NUMBER

TO-220 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL D44E1

D44E2

D44E3

UNITS

Collector-Emitter Voltage

Emitter-Base Voltage

CEO

7.0

CES

EBO

Continuous Collector Current

Continuous Base Current

Power Dissipation

1.0

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

1.56

°C

°C/W

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=Rated V

500

μA

CES

=7.0V

5.0

EBO

I =100mA (D44E1)

CEO

I =100mA (D44E2)

I =100mA (D44E3)

CEO

I =5.0A, I =10mA

1.5

3.0

2.5

CE(SAT)

BE(SAT)

I =10A, I =20mA

I =5.0A, I =10mA

=5.0V, I =5.0A

1000

=10V, I =0, f=1.0MHz

200

μs

I =10A, I =20mA

1.0

2.5

off

I =10A, I =I =20mA

B1 B2

R1 (4-March 2014)

12 3 4 5 6 7...18

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