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D44C1216 PDF预览

D44C1216

更新时间: 2023-05-15 00:00:00
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
4页 156K
描述
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

D44C1216 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:30 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzBase Number Matches:1

D44C1216 数据手册

 浏览型号D44C1216的Datasheet PDF文件第2页浏览型号D44C1216的Datasheet PDF文件第3页浏览型号D44C1216的Datasheet PDF文件第4页 

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D44C12-6200 RENESAS

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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
D44C12-6258 RENESAS

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4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
D44C12-6261 RENESAS

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D44C12-6264 RENESAS

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4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
D44C12-6265 RENESAS

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4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
D44C12AJ MOTOROLA

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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
D44C12D1 MOTOROLA

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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
D44C12-DR6259 RENESAS

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4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
D44C12-DR6260 RENESAS

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4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
D44C12-DR6269 RENESAS

获取价格

4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB