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D40D10 PDF预览

D40D10

更新时间: 2024-02-18 10:38:41
品牌 Logo 应用领域
CENTRAL 局域网开关晶体管
页数 文件大小 规格书
2页 420K
描述
Small Signal Bipolar Transistor, 1A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, TO-202, 3 PIN

D40D10 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.82JESD-609代码:e0
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

D40D10 数据手册

 浏览型号D40D10的Datasheet PDF文件第2页 
D40D1 D40D5 D40D11  
D40D2 D40D7 D40D13  
D40D3 D40D8 D40D14  
D40D4 D40D10  
www.centralsemi.com  
DESCRIPTION:  
NPN SILICON  
POWER TRANSISTOR  
The CENTRAL SEMICONDUCTOR D40D series types  
are NPN silicon power transistors designed for amplifier  
and switching applications. The PNP complementary  
types are the D41D series.  
MARKING: FULL PART NUMBER  
TO-202 CASE  
D40D10  
D40D11  
D40D1  
D40D2 D40D4  
SYMBOL D40D3 D40D5  
D40D7 D40D13  
D40D8 D40D14 UNITS  
MAXIMUM RATINGS: (T =25°C)  
C
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
45  
60  
75  
90  
V
CES  
CEO  
EBO  
V
V
30  
45  
60  
75  
V
5.0  
1.0  
V
Continuous Collector Current  
Peak Collector Current  
I
A
C
I
1.5  
A
CM  
Power Dissipation  
P
6.25  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
20  
°C  
°C/W  
J
stg  
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V
=Rated V  
100  
nA  
CES  
EBO  
CE  
EB  
CES  
I
V
=5.0V  
100  
nA  
V
BV  
BV  
BV  
BV  
l =10mA (D40D1, 2, 3)  
30  
45  
60  
75  
CEO  
CEO  
C
l =10mA (D40D4, 5)  
V
C
l =10mA (D40D7, 8)  
V
CEO  
C
l =10mA (D40D10, 11, 13, 14)  
V
CEO  
C
V
V
V
l =500mA, I =50mA (D40D1, 2, 4, 5)  
0.5  
1.0  
1.5  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
C
B
l =500mA, I =50mA (D40D7, 8, 10, 11, 13, 14)  
V
C
B
l =500mA, I =50mA  
V
C
B
D40D1  
D40D4  
D40D7  
D40D5  
D40D8  
D40D10  
D40D13  
MIN MAX  
50 150  
D40D11  
D40D14  
MIN MAX  
120 360  
D40D2  
MIN MAX  
120 360  
D40D3  
MIN MAX  
h
h
V
=2.0V, I =100mA  
290  
-
FE  
FE  
CE  
CE  
C
V
=2.0V, I =1.0A  
C
(Except D40D13, 14)  
10  
-
20  
-
10  
-
10  
-
R1 (23-January 2012)  

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D40D10C ALLEGRO

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Transistor,
D40D11 CENTRAL

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Small Signal Bipolar Transistor, 1A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, T
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Transistor,
D40D13 CENTRAL

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Small Signal Bipolar Transistor, 1A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, T
D40D14 CENTRAL

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Small Signal Bipolar Transistor, 1A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, T
D40D1-TYPE1 RENESAS

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1A, 30V, NPN, Si, POWER TRANSISTOR, TO-202AB
D40D2 CENTRAL

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Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, T
D40D2-TYPE1 RENESAS

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1A, 30V, NPN, Si, POWER TRANSISTOR, TO-202AB
D40D2-TYPE11 RENESAS

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Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-202AB, Plasti
D40D2-TYPE12 RENESAS

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1A, 30V, NPN, Si, POWER TRANSISTOR, TO-202AB