Datasheet > D25XB05

D25XB05

更新时间： 2024-09-24 01:21:47

品牌	Logo	应用领域
圣诺 - SENO		/
页数	文件大小	规格书
2页	58K
描述
25A GLASS PASSIVATED BRIDGE RECTIFIER

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D25XB05 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

D25XB05-D25XB100

25A GLASS PASSIVATED BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

High Case Dielectric Strength of 1500V

RMS

Dim

Min

29.70

19.70

17.00

3.80

7.30

9.80

2.00

0.90

2.30

Max

30.30

20.30

18.00

4.20

Low Reverse Leakage Current

Surge Overload Rating to 350A Peak

Ideal for Printed Circuit Board Applications

Plastic Material - UL Flammability

Classification 94V-0

Lead Free Finish/RoHS Complian

7.70

10.20

2.40

1.10

Mechanical Data

2.70

Case: Molded Plastic

3.0 X 45°

Terminals: Plated Leads, Solderable per

MIL-STD-202, Method 208

4.40

3.40

3.10

2.50

0.60

10.80

4.80

3.80

3.40

2.90

0.80

11.20

Polarity: Molded on Body

Mounting: Through Hole for #6 Screw

Mounting Torque: 5.0 in-lbs Maximum

Weight: 6.6 grams (approx)

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics^{@ T = 25°C unless otherwise specified}

Single phase, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

D25XB D25XB D25XB D25XB D25XB D25XB D25XB

Characteristic

Symbol

Unit

100

200

140

100

1000

700

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

400

600

420

800

560

V_R(RMS)

I_O

RMS Reverse Voltage

280

Average Forward Rectified Output Current

(Note 1)

@ T_C= 100°C

Non-Repetitive Peak Forward Surge Current 8.3 ms

single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

350

Forward Voltage (per element)

@ I_F= 12.5A

V_FM

I_R

1.05

Peak Reverse Current

at Rated DC Blocking Voltage

@T_C= 25°C

@ T_C= 125°C

500

µA

I²t Rating for Fusing (t < 8.3ms) (Note 1)

I²t

C_j

510

A²s

Typical Junction Capacitance (per element) (Note 2)

Typical Thermal Resistance Junction to Case (Note 3)

Operating and Storage Temperature Range

R_qJC

T_j,T_STG

0.6

°C/W

°C

-65 to +150

Notes:

1. Non-repetitive, for t > 1ms and < 8.3 ms.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.

D25XB05-D25XB100

www.senocn.com

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