5秒后页面跳转
D2253UK PDF预览

D2253UK

更新时间: 2024-09-17 22:17:19
品牌 Logo 应用领域
SEME-LAB 晶体晶体管射频放大器
页数 文件大小 规格书
2页 24K
描述
METAL GATE RF SILICON FET

D2253UK 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:MICROWAVE, R-CDMW-F8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.13
其他特性:LOW NOISE配置:COMMON SOURCE, 2 ELEMENTS
最小漏源击穿电压:40 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDMW-F8
JESD-609代码:e4元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:MICROWAVE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:GOLD端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

D2253UK 数据手册

 浏览型号D2253UK的Datasheet PDF文件第2页 
TetraFET  
D2253UK  
METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
C
D
B
8
7
1
E
2
R
A
3
6
F
5
4
Q
O
5W – 12.5V – 1GHz  
PUSH–PULL  
N
M
J
K
L
I
P
FEATURES  
H
G
• SIMPLIFIED AMPLIFIER DESIGN  
• SUITABLE FOR BROAD BAND APPLICATIONS  
DBC4 Package  
PIN 1 Source (Common) PIN 5 Source (Common)  
PIN 2 Drain 1  
PIN 3 Drain 2  
PIN 6 Gate 2  
PIN 7 Gate 1  
• VERY LOW C  
rss  
• SIMPLE BIAS CIRCUITS  
• LOW NOISE  
PIN 4 Source (Common) PIN 8 Source (Common)  
DIM  
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
mm  
6.47  
0.76  
45°  
Tol.  
0.08  
0.08  
5°  
Inches  
.255  
.030  
45°  
Tol.  
.003  
.003  
5°  
• HIGH GAIN – 10 dB MINIMUM  
0.76  
1.14  
2.67  
11.73  
8.43  
7.92  
0.20  
0.64  
0.30  
3.25  
2.11  
6.35SQ  
1.65  
0.13  
0.25  
0.08  
0.08  
0.08  
0.13  
0.08  
0.08  
0.02  
0.02  
0.02  
0.08  
0.08  
0.08  
0.51  
max  
0.07  
.030  
.045  
.105  
.462  
.332  
.312  
.008  
.025  
.012  
.128  
.083  
.250SQ  
.065  
.005  
0.010  
.003  
.003  
.003  
.005  
.003  
.003  
.001  
.001  
.001  
.003  
.003  
.003  
.020  
max  
.003  
APPLICATIONS  
VHF/UHF COMMUNICATIONS  
from 1MHz to 1 GHz  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
P
Power Dissipation  
15W  
40V  
D
BV  
BV  
Drain – Source Breakdown Voltage *  
Gate – Source Breakdown Voltage *  
Drain Current *  
DSS  
GSS  
±20V  
I
2A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
* Per Side  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 9/00  

与D2253UK相关器件

型号 品牌 获取价格 描述 数据表
D2254 SEME-LAB

获取价格

METAL GATE RF SILICON FET
D2254UK SEME-LAB

获取价格

METAL GATE RF SILICON FET
D2254UK TTELEC

获取价格

Gold metallised multi-purpose silicon DMOS RF FET
D2256UK TTELEC

获取价格

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET
D225E MPD

获取价格

Low Cost, 2W SIP Single & Dual Output DC/DC Converters
D225EI MPD

获取价格

Low Cost, 2W SIP High Isolation DC/DC Converters
D225ERW MPD

获取价格

Low Cost, Miniature 2W SIP, Wide Input DC/DC Con vert ers
D225I MPD

获取价格

High Isolation Miniature, 2W SIP DC/DC Converters
D225K100 OHMITE

获取价格

Potentiometer, Wire Wound, 225W, 100ohm, 4595V, 10% +/-Tol, -260,260ppm/Cel
D225K100E OHMITE

获取价格

Potentiometer, Wire Wound, 225W, 100ohm, 4595V, 10% +/-Tol, -260,260ppm/Cel, ROHS COMPLIAN