Datasheet > D20N10E

D20N10E

更新时间： 2022-02-26 14:49:38

品牌	Logo	应用领域
平伟 - PINGWEI		/
页数	文件大小	规格书
6页	472K
描述
20 Amps, 95Volts N-CHANNEL Power MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

D20N10E 数据手册

D20N10E

20 Amps, 95Volts N-CHANNEL Power MOSFET

DFN5*6

FEATURE

20A,95V,R_DS(ON)MAX=7m

V_GS=10V/5A



Low gate charge

Low C_iss

Fast switching

100% avalanche tested

Improved dv/dt capability

APPLICATION



High Frequency Piont-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA

Networking DC-DC Power System

LCD/LED back light



GENERAL DESCRIPTION

The D20N10E is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and

gate charge for most of the synchronous buck converter applications.

The D20N10E meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.

Absolute Maximum Ratings(T_C=25℃,unless otherwise noted)

Parameter

Symbol

UNIT

D20N10E

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

I_D

±20

Continuous Drain Current

Pulsed Drain Current(Note1)

I_DM

Single Pulse Avalanche Energy (Note 2)

Avalanche Current

E_AS

I_AS

Reverse Diode dV/dt (Note 3)

Operating Junction and Storage Temperature Range

Channel Temperature

dv/dt

T_J,T_STG

T_CH

5.5

V/ns

℃

-55 to +150

150

℃

Maximum lead temperature for soldering purposes,

1/8"from case for 5 seconds

T_L

260

℃

Thermal Characteristics

Parameter

MAX

2.7

Symbol

R_th(ch-c)

R_th(ch-a)

P_D

Units

℃/W

Thermal resistance , Channel to Case

Thermal resistance , Channel to Ambient

Maximum Power Dissipation

T_C=25℃

12 3 4 5 6

下载PDF

与D20N10E相关器件

型号	品牌	描述	获取价格	数据表
D20NA1	MMD	HC-49/US Surface Mounted Crystal	获取价格
D20NA3	MMD	HC-49/US Surface Mounted Crystal	获取价格
D20NB1	MMD	HC-49/US Surface Mounted Crystal	获取价格
D20NB3	MMD	HC-49/US Surface Mounted Crystal	获取价格
D20NC1	MMD	HC-49/US Surface Mounted Crystal	获取价格
D20NC3	MMD	HC-49/US Surface Mounted Crystal	获取价格