Datasheet > D20N06E

D20N06E

更新时间： 2024-11-10 01:25:55

品牌	Logo	应用领域
平伟 - PINGWEI		/
页数	文件大小	规格书
6页	468K
描述
20 Amps,55 Volts N-CHANNEL Power MOSFET

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D20N06E 数据手册

D20N06E

20 Amps,55 Volts N-CHANNEL Power MOSFET

DFN5*6

FEATURE

20A,55V,R_DS(ON)MAX=15m

V_GS=10V/5A



Low gate charge

Low C_iss

Fast switching

100% avalanche tested

Improved dv/dt capability

APPLICATION



High Frequency Piont-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA

Networking DC-DC Power System

LCD/LED back light



GENERAL DESCRIPTION

The D20N06E is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and

gate charge for most of the synchronous buck converter applications.

The D20N06E meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.

Absolute Maximum Ratings(T_C=25℃,unless otherwise noted)

Parameter

Symbol

UNIT

D20N06E

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

I_D

±20

Continuous Drain Current

Pulsed Drain Current(Note1)

I_DM

Single Pulse Avalanche Energy (Note 2)

Avalanche Current

E_AS

I_AS

Reverse Diode dV/dt (Note 3)

Operating Junction and Storage Temperature Range

Channel Temperature

dv/dt

T_J,T_STG

T_CH

5.5

V/ns

℃

-55 to +150

150

℃

Maximum lead temperature for soldering purposes,

1/8"from case for 5 seconds

T_L

260

℃

Thermal Characteristics

Parameter

MAX

2.7

Symbol

R_th(ch-c)

R_th(ch-a)

P_D

Units

℃/W

Thermal resistance , Channel to Case

Thermal resistance , Channel to Ambient

Maximum Power Dissipation

T_C=25℃

12 3 4 5 6

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