Datasheet > D209L

D209L

更新时间： 2024-11-24 10:02:11

品牌	Logo	应用领域
稳先微 - WINSEMI		晶体开关晶体管高压
页数	文件大小	规格书
5页	271K
描述
High Voltage Fast-Switching NPN Power Transistor

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D209L 数据手册

D209L

High Voltage Fast-Switching NPN Power Transistor

Features

◆ Very High Switching Speed

◆ High Voltage Capability

◆ Wide Reverse Bias SOA

General Description

This Device is designed for high voltage, High speed

TO-3P

switching characteristics required such as lighting system,

switching mode power supply.

Absolute Maximum Ratings

Symbol

Parameter

Test Conditions

Value

Units

V_CES

Collector-Emitter Voltage

700

V_BE= 0

V_CEO

Collector-Emitter Voltage

400

I_B= 0

I_C= 0

V_EBO

I_C

I_CP

I_B

Emitter-Base Voltage

Collector Current

9.0

Collector pulse Current

Base Current

6.0

I_BM

Base Peak Current

t_P= 5ms

Total Dissipation at Tc = 25℃

Total Dissipation at Ta= 25℃

130

2.3

P_C

T_J

Operation Junction Temperature

Storage Temperature

- 40 ~ 150

℃

T_STG

Tc: Case temperature (good cooling)

Ta: Ambient temperature (without heat sink)

Thermal Characteristics

Symbol

Parameter

Value

Units

R_θJc

R_θJA

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

0.96

℃/W

Jan 2009. Rev. 0

1/5

12 3 4 5

中文翻译

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