Datasheet > D2089

D2089

更新时间： 2024-01-06 22:47:43

品牌	Logo	应用领域
SEME-LAB		射频
页数	文件大小	规格书
2页	27K
描述
METAL GATE RF SILICON FET

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中文翻译

获取价格

数据手册

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D2089 数据手册

TetraFET

D2089UK

METAL GATE RF SILICON FET

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

1W – 28V – 2GHz

SINGLE ENDED

(2 pls)

FEATURES

(

2 p

)

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

PIN 1

SOURCE

PIN 2

PIN 4

GATE

PIN 3

DRAIN

• LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

DIM

Millimetres

25.40

45°

0.76

5.21 DIA

1.02

Tol.

0.25

5°

0.05

0.13

0.02

0.13

REF

Inches

1.00

45°

0.030

0.205

0.040

0.005

0.125

Tol.

0.010

5°

0.002

0.005

0.001

0.005

REF

• HIGH GAIN

0.13

3.18

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from DC to 2 GHz

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Power Dissipation

65V

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

DSS

±20V

GSS

D(sat)

Storage Temperature

–65 to 150°C

200°C

stg

Maximum Operating Junction Temperature

Prelim. 5/96

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

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