5秒后页面跳转
D1427 PDF预览

D1427

更新时间: 2024-09-24 21:53:51
品牌 Logo 应用领域
永盛 - Wing Shing 晶体晶体管
页数 文件大小 规格书
1页 64K
描述
Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

D1427 数据手册

  
Silicon Diffused Power Transistor  
2SD1427  
GENERAL DESCRIPTION  
Highvoltage,high-speed switching npn transistors in a  
plastic envelope with integrated efficiency diode,prim-  
arily for use in horizontal deflection circuites of colour  
television receivers  
TO-3PH  
QUICK REFERENCE DATA  
SYMBOL  
VCESM  
VCEO  
IC  
ICM  
Ptot  
VCEsat  
Icsat  
VF  
PARAMETER  
CONDITIONS  
TYP  
MAX  
1500  
600  
5
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Collector current (DC)  
VBE = 0V  
-
-
-
-
-
V
A
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Collector saturation current  
Diode forward voltage  
10  
A
Tmb 25  
80  
W
V
IC = 4.0A; IB = 0.8A  
f = 16KHz  
5
-
-
-
A
IF = 4.0A  
1.2  
0.5  
1.5  
1.0  
V
Fall time  
ICsat = 4.0A; f = 16KHz  
s
tf  
LIMITING VALUES  
SYMBOL  
VCESM  
VCEO  
IC  
ICM  
IB  
PARAMETER  
CONDITIONS  
MIN  
MAX  
1500  
600  
5
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Collector current (DC)  
VBE = 0V  
-
-
V
-
A
Collector current peak value  
Base current (DC)  
-
10  
A
-
-
A
Base current peak value  
Total power dissipation  
Storage temperature  
-
-
-
A
IBM  
Ptot  
Tstg  
Tj  
Tmb 25  
80  
W
-55  
-
150  
150  
Junction temperature  
ELECTRICAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
TYP  
MAX  
1.0  
UNIT  
mA  
Collector cut-off current  
VBE = 0V; VCE = VCESMmax  
VBE = 0V; VCE = VCESMmax  
Tj = 125  
-
-
ICE  
ICES  
2.0  
mA  
Collector-emitter sustaining voltage  
IB = 0A; IC = 100mA  
L = 25mH  
-
V
VCEOsust  
Collector-emitter saturation voltages  
Base-emitter satuation voltage  
DC current gain  
IC = 4.0A; IB = 0.8A  
IC = 4.0A; IB = 0.8A  
IC = 1.0A; VCE = 5V  
IF = 4.0A  
-
-
5.0  
1.5  
V
V
VCEsat  
VBEsat  
hFE  
VF  
fT  
Cc  
8
Diode forward voltage  
1.2  
2
1.5  
V
MHz  
pF  
s
Transition frequency at f = 5MHz  
Collector capacitance at f = 1MHz  
Switching times(16KHz line deflecton circuit)  
Turn-off storage time Turn-off fall time  
IC = 0.1A; VCE = 10V  
VCB = 10V  
-
-
80  
-
ICsat = 4.0A; Lc=1mH; Cfb = 4nF  
IB(end) = 0.8A; IC = 4.0A ; VCC = 105V  
-
ts  
tf  
0.5  
1.0  
s
Wing Shing Computer Components Co., (H.K.)Ltd.  
Homepage: http://www.wingshing.com  
Tel:(852)2341 9276 Fax:(852)2797 8153  
E-mail: wsccltd@hkstar.com  

与D1427相关器件

型号 品牌 获取价格 描述 数据表
D142A ETC

获取价格

COMMON ANODE DIODE ARRAY|SIP
D142AG-00 HUASHAN

获取价格

NPN SILICON TRANSISTOR
D142C ETC

获取价格

COMMON CATHODE DIODE ARRAY|SIP
D14-2C TTELEC

获取价格

DIODE NETWORKS D SERIES
D142F1001F AMPHENOL

获取价格

Interconnection Device
D142F1001I AMPHENOL

获取价格

Interconnection Device
D142F1001M AMPHENOL

获取价格

Interconnection Device
D142F1003F AMPHENOL

获取价格

Interconnection Device
D142F1003I AMPHENOL

获取价格

Interconnection Device
D142F1003M AMPHENOL

获取价格

Interconnection Device