Datasheet > D1217

D1217

更新时间： 2024-09-22 22:29:03

品牌	Logo	应用领域
SEME-LAB		射频
页数	文件大小	规格书
2页	21K
描述
METAL GATE RF SILICON FET

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中文翻译

获取价格

数据手册

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D1217 数据手册

TetraFET

D1217UK

METAL GATE RF SILICON FET

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

(2 pls)

40W – 12.5V – 500MHz

PUSH–PULL

Typ.

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• LOW C

rss

PIN 1

PIN 3

PIN 5

PIN 7

SOURCE (COMMON) PIN 2

DRAIN 2 PIN 4

SOURCE (COMMON) PIN 6

DRAIN 1

• SIMPLE BIAS CIRCUITS

• LOW NOISE

SOURCE (COMMON)

GATE 2

GATE 1

PIN 8

SOURCE (COMMON)

• HIGH GAIN – 10 dB MINIMUM

DIM

9.14

12.70

45°

6.86

0.76

9.78

19.05

4.19

Tol.

Inches

Tol.

0.13

5°

0.360

0.500

45°

0.005

5°

0.13

0.25

0.13

0.02

0.64

0.13

0.270

0.030

0.385

0.750

0.165

0.125

0.060R

0.065R

0.650

0.900

0.005

0.250

0.424

0.005

0.010

0.005

0.001

0.025

0.005

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 500 MHz

3.17

1.52R

1.65R

16.51

22.86

0.13

6.35

10.77

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

175W

case

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

40V

±20V

DSS

GSS

20A

D(sat)

Storage Temperature

–65 to 150°C

200°C

stg

Maximum Operating Junction Temperature

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 9/00

中文翻译

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