TetraFET
D1019UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
C
1
4
2
3
20W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
D
• LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DW
• HIGH GAIN – 16 dB MINIMUM
PIN 1
PIN 3
DRAIN
GATE
PIN 2
PIN 4
SOURCE
SOURCE
DIM
A
B
mm
26.16
5.72
45°
Tol.
Inches
1.030
0.225
45°
Tol.
0.015
0.005
5°
APPLICATIONS
0.38
0.13
5°
• HF/VHF/UHF COMMUNICATIONS
C
from 1 MHz to 175 MHz
D
E
F
G
H
7.11
0.13
1.52
0.43
7.67
0.13
0.03
0.13
0.20
REF
0.280
0.005
0.055
0.060
0.120
0.005
0.001
0.005
0.008
REF
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
P
Power Dissipation
50W
70V
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
DSS
GSS
±20V
I
5A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 5315
Issue 2
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk