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D1018UK PDF预览

D1018UK

更新时间: 2024-02-10 03:59:25
品牌 Logo 应用领域
SEME-LAB 射频
页数 文件大小 规格书
2页 21K
描述
METAL GATE RF SILICON FET

D1018UK 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CERAMIC, DD, 8 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.3
其他特性:LOW NOISE外壳连接:SOURCE
配置:COMMON SOURCE, 2 ELEMENTS最小漏源击穿电压:70 V
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F8JESD-609代码:e4
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:GOLD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

D1018UK 数据手册

 浏览型号D1018UK的Datasheet PDF文件第2页 
TetraFET  
D1018UK  
METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
B
A
E
C
(2 pls)  
1
2
7
3
6
4
5
K
100W – 28V – 500MHz  
PUSH–PULL  
F
G
8
J
Typ.  
D
M
Q
FEATURES  
• SIMPLIFIED AMPLIFIER DESIGN  
• SUITABLE FOR BROAD BAND APPLICATIONS  
P
I
N
O
H
DD  
• LOW C  
PIN 1  
PIN 3  
PIN 5  
PIN 7  
SOURCE (COMMON) PIN 2  
DRAIN 2 PIN 4  
SOURCE (COMMON) PIN 6  
DRAIN 1  
rss  
SOURCE (COMMON)  
GATE 2  
• SIMPLE BIAS CIRCUITS  
• LOW NOISE  
GATE 1  
PIN 8  
SOURCE (COMMON)  
DIM  
A
B
C
D
E
mm  
9.14  
12.70  
45°  
6.86  
0.76  
9.78  
19.05  
4.19  
Tol.  
Inches  
Tol.  
0.13  
0.13  
5°  
0.360  
0.500  
45°  
0.005  
0.005  
5°  
• HIGH GAIN – 10 dB MINIMUM  
0.13  
0.13  
0.13  
0.25  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.02  
0.64  
0.13  
0.270  
0.030  
0.385  
0.750  
0.165  
0.125  
0.060R  
0.065R  
0.650  
0.900  
0.005  
0.250  
0.424  
0.005  
0.005  
0.005  
0.010  
0.005  
0.005  
0.005  
0.005  
0.005  
0.005  
0.001  
0.025  
0.005  
F
APPLICATIONS  
G
H
I
J
K
M
N
O
P
HF/VHF/UHF COMMUNICATIONS  
from 1 MHz to 500 MHz  
3.17  
1.52R  
1.65R  
16.51  
22.86  
0.13  
6.35  
10.77  
Q
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
250W  
case  
P
Power Dissipation  
D
BV  
BV  
Drain – Source Breakdown Voltage *  
Gate – Source Breakdown Voltage *  
Drain Current *  
70V  
±20V  
DSS  
GSS  
I
15A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
* Per Side  
Prelim. 10/95  
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.  

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