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CZTA28BKPBFREE PDF预览

CZTA28BKPBFREE

更新时间: 2024-11-15 08:58:39
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 528K
描述
Transistor,

CZTA28BKPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):0.5 A配置:DARLINGTON
最小直流电流增益 (hFE):10000最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):125 MHzBase Number Matches:1

CZTA28BKPBFREE 数据手册

 浏览型号CZTA28BKPBFREE的Datasheet PDF文件第2页 
CZTA28  
www.centralsemi.com  
SURFACE MOUNT  
NPN SILICON DARLINGTON  
TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZTA28 type is  
a NPN Silicon Darlington Transistor manufactured by  
the epitaxial planar process, epoxy molded in a surface  
mount package, designed for applications requiring  
extremely high gain.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Emitter Voltage  
Collector-Base Voltage  
V
80  
80  
CES  
CBO  
EBO  
V
V
V
Emitter-Base Voltage  
12  
V
Continuous Collector Current  
Power Dissipation  
I
500  
mA  
W
C
P
2.0  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
J, stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
500  
100  
UNITS  
nA  
nA  
nA  
V
I
I
I
V
V
V
=60V  
=60V  
=10V  
CBO  
CES  
EBO  
CB  
CE  
EB  
BV  
BV  
BV  
I =100µA  
80  
80  
12  
CBO  
CES  
C
I =100µA  
V
C
I =10µA  
V
EBO  
E
V
V
V
I =10mA, I =10µA  
1.2  
1.5  
2.0  
V
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
B
I =100mA, I =100µA  
V
C
B
V
=5.0V, I =100mA  
V
CE  
CE  
CE  
CE  
CB  
C
h
h
V
V
V
V
=5.0V, I =10mA  
10,000  
10,000  
125  
C
=5.0V, I =100mA  
FE  
C
f
=5.0V, I =10mA, f=100MHz  
MHz  
pF  
T
C
C
=10V, I =0, f=100kHz  
8.0  
ob  
E
R3 (1-March 2010)  

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Absolute Maximum Ratings Ta = 25