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CZT651TR13LEADFREE PDF预览

CZT651TR13LEADFREE

更新时间: 2024-02-08 20:10:15
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 528K
描述
Transistor

CZT651TR13LEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):2 A
配置:Single最小直流电流增益 (hFE):40
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):2 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):75 MHz
Base Number Matches:1

CZT651TR13LEADFREE 数据手册

 浏览型号CZT651TR13LEADFREE的Datasheet PDF文件第2页 
CZT651  
www.centralsemi.com  
SURFACE MOUNT  
HIGH CURRENT  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT651 type is a  
NPN Silicon Transistor manufactured by the epitaxial  
planar process, epoxy molded in a surface mount  
package, designed for high current applications  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Collector-Base Voltage  
V
V
V
80  
60  
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
5.0  
V
Continuous Collector Current  
Power Dissipation  
I
2.0  
A
C
P
2.0  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
°C/W  
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
UNITS  
I
I
V
V
=80V  
nA  
nA  
V
CBO  
EBO  
CB  
EB  
=4.0V  
100  
BV  
BV  
BV  
I =100µA  
80  
60  
CBO  
CEO  
C
I =10mA  
V
C
I =10µA  
5.0  
V
EBO  
E
V
V
V
V
I =1.0A, I =100mA  
0.3  
0.5  
1.2  
1.0  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
I =2.0A, I =200mA  
V
C
B
I =1.0A, I =100mA  
V
C
B
V
=2.0V, I =1.0A  
V
CE  
CE  
CE  
CE  
CE  
CE  
C
h
h
h
h
V
V
V
V
V
=2.0V, I =50mA  
75  
75  
75  
40  
75  
C
=2.0V, I =500mA  
FE  
C
=2.0V, I =1.0A  
FE  
C
=2.0V, I =2.0A  
FE  
C
f
=5.0V, I =50mA, f=100MHz  
MHz  
T
C
R4 (1-March 2010)  

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