Datasheet > CZT127

CZT127

更新时间： 2023-12-06 20:10:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		开关光电二极管晶体管
页数	文件大小	规格书
3页	665K
描述
SOT-223

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中文翻译

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数据手册

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CZT127 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-223 Plastic-Encapsulate Transistors

SOT-223

CZT127 TRANSISTOR (PNP)

FEATURES

Complementary to CZT122

1. BASE

Silicon Power Darlington Transistors

Low speed switching and amplifier applications

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Equivalent Circuit

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-100

-5

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Operation Junction and Storage Temperature Range

-5

P_C

℃

T_J,T_stg

-55~150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

I_CBO

Test conditions

I_C=-1m A,I_E=0

Min

-100

Typ

Max

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Collector cut-off current

Base cut-off current

I_C=-30mA,I_B=0

V_CB=-100V,I_E=0

-200

-500

-2

I_CEO

V_CE=-50V,I_B=0

Emitter cut-off current

I_EBO

V_EB=-5V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)1

V_CE(sat)2

V_BE(on)

f_T

V_CE=-3V,I_C=-0.5A

V_CE=-3V,I_C=-3A

1000

DC current gain

I_C=-3A,I_B=-12mA

I_C=-5A,I_B=-20mA

V_CE=-3V,I_C=-3A

-2

-4

Collector-emitter saturation voltage

Base-emitter voltage

-2.5

Transition frequency

V_CE=-4V,I_C=-3A,f=1MHz

V_CB=-10V, I_E=0, f=1.0MHz

MHz

Collector output capacitance

Cob

200

www.jscj-elec.com

Rev. - 2.1

12 3

中文翻译

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