Datasheet > CZT127

CZT127

更新时间： 2024-11-19 06:51:55

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管达林顿晶体管开关光电二极管
页数	文件大小	规格书
1页	39K
描述
Surface Mount PNP Silicon Power Darlington Transistor

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中文翻译

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数据手册

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CZT127 数据手册

SMD Type

TransistIoCrs

Surface Mount PNP Silicon Power Darlington Transistor

KZT127 ^(CZT127)

SOT-223

Unit: mm

Features

+0.2

3.50

-0.2

+0.2

6.50

-0.2

High current (max. 5A).

Low voltage (max. 100V).

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

1 Base

2 Collector

3 Emitter

4 Collector

+0.1

0.70

-0.1

2.9

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

-100

Collector-emitter voltage

Emitter-base voltage

-100

-5

-8

Collector current

ICP

Base current

-120

power dissipation

Thermal Resistance.Junction-to-Ambient

Junction temperature

Storage temperature

Tstg

62.5

150

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Collector to emitter breakdown voltage

Collctor cutoff current

Symbol

Testconditons

Min

Typ

Max

Unit

VCEO

ICEO

ICBO

IEBO

IC=-30mA

VCE=-50V

-100

-500

-200

-2.0

Collector cutoff current

VCB = -100 V

Emitter cutoff current

VEB = -5.0 V

m A

IC =- 500 mA; VCE =-3.0 V

IC = -3A; VCE = -3.0V

IC = -3.0A; IB =- 12mA

1000

DC current gain

hFE

Collector to emitter saturation voltage

Base to emitter saturation voltage

Output capacitance

VCE(sat)

-2.0

-4.0

300

VBE(sat) IC = -5.0A; IB = -20mA

Cob

VCB = -10 V, IE = 0,f=1.0MHz

IC= -3A; VCE =-4V; f = 1.0 MHz

Transition frequency

4.0

MHz

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