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CZT122LEADFREE PDF预览

CZT122LEADFREE

更新时间: 2024-11-19 21:14:15
品牌 Logo 应用领域
CENTRAL 开关光电二极管晶体管
页数 文件大小 规格书
2页 597K
描述
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, POWER223, 3 PIN

CZT122LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:POWER223, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.11外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:100 V
配置:DARLINGTON最小直流电流增益 (hFE):1000
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN (315)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

CZT122LEADFREE 数据手册

 浏览型号CZT122LEADFREE的Datasheet PDF文件第2页 
CZT122 NPN  
CZT127 PNP  
www.centralsemi.com  
SURFACE MOUNT  
COMPLEMENTARY SILICON  
POWER DARLINGTON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT122, CZT127  
types are Complementary Silicon Power Darlington  
Transistors manufactured in a surface mount package  
designed for low speed switching and amplifier  
applications.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
100  
100  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
5.0  
V
Continuous Collector Current  
Peak Collector Current  
I
5.0  
A
C
I
8.0  
A
CM  
Continuous Base Current  
Power Dissipation  
I
120  
mA  
W
B
P
2.0  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
°C/W  
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
500  
200  
2.0  
UNITS  
µA  
µA  
mA  
V
I
I
I
V
V
V
=50V  
=100V  
=5.0V  
CEO  
CBO  
EBO  
CE  
CB  
EB  
BV  
I =30mA  
100  
CEO  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
V
V
V
I =3.0A, I =12mA  
2.0  
4.0  
2.5  
V
C
B
I =5.0A, I =20mA  
V
C
B
V
=3.0V, I =3.0A  
V
CE  
CE  
CE  
CE  
CB  
CB  
C
h
h
V
V
V
V
V
=3.0V, I =500mA  
1000  
1000  
4.0  
C
=3.0V, I =3.0A  
FE  
C
f
=4.0V, I =3.0A, f=1.0MHz  
MHz  
pF  
T
C
C
C
=10V, I =0, f=1.0MHz (CZT122)  
200  
300  
ob  
ob  
E
=10V, I =0, f=1.0MHz (CZT127)  
pF  
E
R4 (1-March 2010)  

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