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CZT122 PDF预览

CZT122

更新时间: 2024-11-20 14:55:43
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 665K
描述
SOT-223

CZT122 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.71
Is Samacsys:NBase Number Matches:1

CZT122 数据手册

 浏览型号CZT122的Datasheet PDF文件第2页浏览型号CZT122的Datasheet PDF文件第3页浏览型号CZT122的Datasheet PDF文件第4页 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-223 Plastic-Encapsulate Transistors  
SOT-223  
CZT122 TRANSISTOR (NPN)  
FEATURES  
z
z
z
Complementary to CZT127  
1. BASE  
Silicon Power Darlington Transistors  
Low speed switching and amplifier applications  
2. COLLECTOR  
3. EMITTER  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
100  
Collector-Base Voltage  
100  
V
Collector-Emitter Voltage  
5
V
Emitter-Base Voltage  
Collector Current -Continuous  
Collector Power Dissipation  
Operation Junction and Storage Temperature Range  
5
1
A
PC  
W
TJ,Tstg  
-55~150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
ICBO  
Test conditions  
IC=1m A,IE=0  
Min  
100  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Collector cut-off current  
Base cut-off current  
IC=30mA,IB=0  
100  
V
VCB=100V,IE=0  
VCE=50V,IB=0  
200  
500  
2
uA  
uA  
mA  
ICEO  
Emitter cut-off current  
IEBO  
VEB=5V,IC=0  
hFE(1)  
hFE(2)  
VCE(sat)1  
VCE(sat)2  
VBE(on)  
fT  
VCE=3V,IC=0.5A  
VCE=3V,IC=3A  
1000  
1000  
DC current gain  
IC=3A,IB=12mA  
IC=5A,IB=20mA  
VCE=3V,IC=3A  
2
4
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
2.5  
V
Transition frequency  
VCE=4V,IC=3A,f=1MHz  
VCB=10V, IE=0, f=1.0MHz  
4
MHz  
pF  
Collector output capacitance  
Cob  
200  
www.jscj-elec.com  
Rev. - 2.0  
1

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