CYTA44DTR

更新时间： 2024-11-24 13:01:27

品牌	Logo	应用领域
CENTRAL		晶体晶体管高压
页数	文件大小	规格书
2页	103K
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CYTA44DTR 数据手册

Central

CYTA44D

Semiconductor Corp.

SURFACE MOUNT

DUAL, ISOLATED NPN HIGH VOLTAGE

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CYTA44D

type consists of two (2) isolated NPN high

voltage silicon transistors packaged in an epoxy

molded SOT-228 surface mount case.

Manufactured by the epitaxial planar process,

this SUPERmini™ device is ideal for high

voltage applications.

MARKING CODE: FULL PART NUMBER

SOT-228 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

450

400

6.0

CBO

CEO

EBO

300

2.0

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

62.5

°C

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

100

500

100

UNITS

=400V

=4.0V

CBO

CES

EBO

I =100µA

450

400

6.0

CBO

I =100µA

CES

I =1.0mA

CEO

I =10µA

EBO

I =1.0mA, I =0.1mA

0.40

0.50

0.75

CE(SAT)

I =10mA, I =1.0mA

CE(SAT)

I =50mA, I =5.0mA

CE(SAT)

I =10mA, I =1.0mA

BE(SAT)

=10V, I =1.0mA

=10V, I =10mA

200

=10V, I =50mA

=10V, I =100mA

=10V, I =10mA, f=10MHz

MHz

=20V, I =0, f=1.0MHz

=0.5V, I =0, f=1.0MHz

7.0

130

R1 (11-August 2005)

中文翻译

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