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CYTA4494DTR13 PDF预览

CYTA4494DTR13

更新时间: 2024-11-24 19:53:07
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 104K
描述
Small Signal Bipolar Transistor, 0.3A I(C), NPN and PNP

CYTA4494DTR13 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
最大集电极电流 (IC):0.3 A配置:Single
最小直流电流增益 (hFE):20最高工作温度:150 °C
极性/信道类型:NPN/PNP最大功率耗散 (Abs):2 W
子类别:BIP General Purpose Small Signal表面贴装:YES
标称过渡频率 (fT):20 MHzBase Number Matches:1

CYTA4494DTR13 数据手册

 浏览型号CYTA4494DTR13的Datasheet PDF文件第2页 
TM  
CYTA4494D  
Central  
SURFACE MOUNT  
DUAL, ISOLATED  
COMPLEMENTARY NPN & PNP  
HIGH VOLTAGE  
Semiconductor Corp.  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CYTA4494D  
type consists of one (1) NPN high voltage silicon  
transistor and one (1) complementary PNP high  
voltage silicon transistor packaged in an epoxy  
molded SOT-228 surface mount case.  
Manufactured by the epitaxial planar process,  
this SUPERmini™ device is ideal for high  
voltage applications.  
SILICON TRANSISTORS  
MARKING CODE: FULL PART NUMBER  
SOT-228 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
NPN (Q1)  
450  
PNP (Q2)  
400  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
V
V
V
CBO  
400  
400  
CEO  
Emitter-Base Voltage  
Collector Current  
V
6.0  
300  
2.0  
6.0  
300  
2.0  
V
mA  
W
EBO  
I
C
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
-65 to +150  
62.5  
°C  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
NPN (Q1)  
PNP (Q2)  
SYMBOL  
TEST CONDITIONS  
MIN MAX  
MIN MAX  
UNITS  
nA  
nA  
nA  
nA  
nA  
V
I
V
V
V
V
V
=350V  
=350V  
=400V  
=400V  
=4.0V  
100  
500  
CBO  
CB  
CE  
CB  
CE  
BE  
I
CES  
I
100  
500  
CBO  
I
CES  
I
100  
100  
400  
EBO  
BV  
I =100µA  
450  
CBO  
C
BV  
I =100µA  
C
450  
400  
V
CES  
BV  
I =1.0mA  
400  
400  
V
CEO  
C
BV  
I =10µA  
E
6.0  
6.0  
V
EBO  
V
I =1.0mA, I =0.1mA  
0.40  
0.50  
0.75  
0.75  
40  
0.40  
0.50  
0.75  
0.75  
40  
V
CE(SAT)  
C
B
V
I =10mA, I =1.0mA  
V
CE(SAT)  
C
B
V
I =50mA, I =5.0mA  
V
CE(SAT)  
C
B
V
I =10mA, I =1.0mA  
V
BE(SAT)  
C
B
h
V
=10V, I =1.0mA  
FE  
CE  
CE  
CE  
CE  
C
h
V
V
V
=10V, I =10mA  
C
50  
45  
20  
200  
50  
45  
20  
200  
FE  
h
=10V, I =50mA  
FE  
C
h
=10V, I =100mA  
C
FE  
R0 (14-March 2005)  

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