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5962-9459901MXA PDF预览

5962-9459901MXA

更新时间: 2024-01-03 11:12:40
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器静态存储器内存集成电路
页数 文件大小 规格书
18页 1176K
描述
Non-Volatile SRAM, 8KX8, 55ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28

5962-9459901MXA 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:DIP, DIP28,.3Reach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.8Is Samacsys:N
最长访问时间:55 ns其他特性:EEPROM HARDWARE/SOFTWARE STORE; SOFTWARE RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES
JESD-30 代码:R-CDIP-T28JESD-609代码:e0
长度:35.56 mm内存密度:65536 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:8KX8输出特性:3-STATE
可输出:YES封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装等效代码:DIP28,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883座面最大高度:4.14 mm
最大待机电流:0.004 A子类别:SRAMs
最大压摆率:0.075 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn85Pb15)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

5962-9459901MXA 数据手册

 浏览型号5962-9459901MXA的Datasheet PDF文件第2页浏览型号5962-9459901MXA的Datasheet PDF文件第3页浏览型号5962-9459901MXA的Datasheet PDF文件第4页浏览型号5962-9459901MXA的Datasheet PDF文件第5页浏览型号5962-9459901MXA的Datasheet PDF文件第6页浏览型号5962-9459901MXA的Datasheet PDF文件第7页 
STK12C68-5 (SMD5962-94599)  
64 Kbit (8 K x 8) AutoStore nvSRAM  
Features  
Functional Description  
35 ns and 55 ns access times  
The Cypress STK12C68-5 is a fast static RAM with a  
nonvolatile element in each memory cell. The embedded  
Hands off automatic STORE on power down with external  
68 µF capacitor  
nonvolatile elements incorporate QuantumTrap technology  
producing the world’s most reliable nonvolatile memory. The  
SRAM provides unlimited read and write cycles, while  
independent nonvolatile data resides in the highly reliable  
QuantumTrap cell. Data transfers from the SRAM to the  
nonvolatile elements (the STORE operation) takes place  
automatically at power down. On power up, data is restored to  
the SRAM (the RECALL operation) from the nonvolatile  
memory. Both the STORE and RECALL operations are also  
available under software control. A hardware STORE is  
initiated with the HSB pin.  
STORE to QuantumTrap™ nonvolatile elements is initiated  
by software, hardware, or AutoStore™ on power down  
RECALL to SRAM initiated by software or power up  
Unlimited Read, Write, and Recall cycles  
1,000,000 STORE cycles to QuantumTrap  
100 year data retention to QuantumTrap  
Single 5 V + 10% operation  
For a complete list of related documentation, click here.  
Military temperature  
28-pin (300mil) CDIP and 28-pad LCC packages  
Logic Block Diagram  
V
V
CAP  
CC  
Quantum Trap  
128 X 512  
A5  
POWER  
STORE  
CONTROL  
A6  
A7  
RECALL  
STORE/  
RECALL  
CONTROL  
STATIC RAM  
ARRAY  
128 X 512  
A8  
HSB  
A9  
A11  
A12  
SOFTWARE  
DETECT  
A0 -A12  
DQ0  
COLUMN I/O  
DQ1  
DQ2  
DQ3  
COLUMN DEC  
DQ4  
DQ5  
A0  
A4  
A10  
A1  
A3  
A2  
DQ6  
DQ7  
OE  
CE  
WE  
Cypress Semiconductor Corporation  
Document Number: 001-51026 Rev. *C  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised April 2, 2015  

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