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5962-8983913RA PDF预览

5962-8983913RA

更新时间: 2024-01-16 06:28:01
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟输入元件可编程逻辑
页数 文件大小 规格书
13页 262K
描述
EE PLD, 15ns, PAL-Type, CMOS, CDIP20, CERAMIC, DIP-20

5962-8983913RA 技术参数

生命周期:Transferred零件包装代码:DIP
包装说明:DIP,针数:20
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.39.00.01风险等级:5.23
JESD-30 代码:R-GDIP-T20JESD-609代码:e0
专用输入次数:8I/O 线路数量:8
端子数量:20最高工作温度:125 °C
最低工作温度:-55 °C组织:8 DEDICATED INPUTS, 8 I/O
输出函数:MACROCELL封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE可编程逻辑类型:EE PLD
传播延迟:15 ns认证状态:Not Qualified
筛选级别:MIL-STD-883最大供电电压:5.5 V
最小供电电压:4.5 V标称供电电压:5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:DUAL
Base Number Matches:1

5962-8983913RA 数据手册

 浏览型号5962-8983913RA的Datasheet PDF文件第2页浏览型号5962-8983913RA的Datasheet PDF文件第3页浏览型号5962-8983913RA的Datasheet PDF文件第4页浏览型号5962-8983913RA的Datasheet PDF文件第5页浏览型号5962-8983913RA的Datasheet PDF文件第6页浏览型号5962-8983913RA的Datasheet PDF文件第7页 
16V8  
PALCE16V8  
Flash Erasable,  
Reprogrammable CMOS PAL® Device  
• Up to 16 input terms and 8 outputs  
Features  
7.5 ns coml version  
5 ns tCO  
• Active pull-up on data input pins  
• Low power version (16V8L)  
5 ns tS  
7.5 ns tPD  
— 55 mA max. commercial (10, 15, 25 ns)  
125-MHz state machine  
— 65 mA max. industrial (10, 15, 25 ns)  
— 65 mA military (15 and 25 ns)  
10 ns military/industrial versions  
7 ns tCO  
10 ns tS  
• Standard version has low power  
— 90 mA max. commercial (10, 15, 25 ns)  
— 115 mA max. commercial (7 ns)  
10 ns tPD  
62-MHz state machine  
High reliability  
Proven Flash technology  
— 130 mA max. military/industrial (10, 15, 25 ns)  
100% programming and functional testing  
• CMOS Flash technology for electrical erasability and  
reprogrammability  
• PCI compliant  
Functional Description  
• User-programmable macrocell  
— Output polarity control  
The Cypress PALCE16V8 is a CMOS Flash Electrical Eras-  
able second-generation programmable array logic device. It is  
implemented with the familiar sum-of-product (AND-OR) logic  
structure and the programmable macrocell.  
— Individually selectable for registered or combinato-  
rial operation  
Logic Block Diagram (PDIP/CDIP)  
GND  
I
8
I
7
I
6
I
5
I
4
I
3
I
2
I
1
CLK/I  
0
10  
9
8
7
6
5
4
3
2
1
PROGRAMMABLE  
AND ARRAY  
(64 x 32)  
8
8
8
8
8
8
8
8
Macrocell  
Macrocell  
Macrocell  
Macrocell  
Macrocell  
Macrocell  
Macrocell  
Macrocell  
11  
12  
I/O  
13  
I/O  
14  
I/O  
15  
I/O  
16  
I/O  
17  
I/O  
18  
I/O  
19  
I/O  
20  
OE/I  
V
CC  
9
0
1
2
3
4
5
6
7
16V81  
PLCC/LCC  
Top View  
Pin Configurations  
DIP  
Top View  
1
2
3
4
20  
19  
18  
CLK/I  
V
I/O  
I/O  
I/O  
5
0
CC  
I
1
7
3 2 1 2019  
I
2
6
I
18  
I/O  
6
4
5
6
7
8
17  
I
3
3
I
17  
I/O  
5
6
4
5
16 I/O  
I
I
5
4
4
I
I/O  
16  
15  
14  
5
4
I/O  
15 I/O  
3
I
6
3
I/O  
14  
13  
12  
11  
7
8
9
10  
I/O  
I
2
I
6
7
7
2
I/O  
I
9 10111213  
1
I
I/O  
8
0
16V82  
16V83  
GND  
OE/I  
9
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-03025 Rev. **  
Revised September 3, 1998  

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