CYDM256B16
CYDM128B16
CYDM064B16
1.8V 4K/8K/16K x 16
MoBL® Dual-Port Static RAM
• Full asynchronous operation
Features
• Automatic power-down
• True dual-ported memory cells that allow simultaneous
access of the same memory location
• Pin select for Master or Slave
• Expandable data bus to 32 bits with Master/Slave chip
select when using more than one device
• 4/8/16K × 16 organization
• High-speed access: 40 ns
• On-chip arbitration logic
• Ultra Low operating power
• Semaphores included to permit software handshaking
between ports
— Active: ICC = 15 mA (typical) at 55 ns
— Active: ICC = 25 mA (typical) at 40 ns
— Standby: ISB3 = 2 µA (typical)
• Input Read Registers and Output Drive Registers
• INT flag for port-to-port communication
• Separate upper-byte and lower-byte control
• Industrial temperature ranges
• Small footprint: Available in a 6x6 mm 100-pin
Lead(Pb)-free vfBGA
• Port-independent 1.8V, 2.5V, and 3.0V I/Os
Selection Guide for VCC = 1.8V
CYDM256B16, CYDM128B16,
CYDM256B16, CYDM128B16,
CYDM064B16
-40
CYDM064B16
-55
Port I/O Voltages (P1-P2)
Maximum Access Time
1.8V-1.8V
1.8V-1.8V
Unit
ns
40
25
2
55
15
2
Typical Operating Current
Typical Standby Current for ISB1
Typical Standby Current for ISB3
mA
µA
2
2
µA
Selection Guide for VCC = 2.5V
CYDM256B16, CYDM128B16,
CYDM256B16, CYDM128B16,
CYDM064B16
-40
CYDM064B16
-55
Port I/O Voltages (P1-P2)
Maximum Access Time
2.5V-2.5V
2.5V-2.5V
Unit
ns
40
39
6
55
28
6
Typical Operating Current
Typical Standby Current for ISB1
Typical Standby Current for ISB3
mA
µA
4
4
µA
Selection Guide for VCC = 3.0V
CYDM256B16, CYDM128B16,
CYDM256B16, CYDM128B16,
CYDM064B16
-40
CYDM064B16
-55
Port I/O Voltages (P1-P2)
Maximum Access Time
3.0V-3.0V
3.0V-3.0V
Unit
ns
40
49
7
55
42
7
Typical Operating Current
Typical Standby Current for ISB1
Typical Standby Current for ISB3
mA
µA
6
6
µA
Cypress Semiconductor Corporation
Document #: 001-00217 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised January 25, 2007
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