CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
CYDM064A08
1.8V 4K/8K/16K x 16 and 8K/16K x 8
MoBL® Dual-Port Static RAM
• Full asynchronous operation
• Automatic power-down
Features
• True dual-ported memory cells which allow simulta-
• Pin select for Master or Slave
neous access of the same memory location
• 4/8/16K × 16 and 8/16K x 8 organization
• High-speed access: 35 ns
• Expandable data bus to 32 bits with Master/Slave chip
select when using more than one device
• On-chip arbitration logic
• Ultra Low operating power
• Semaphores included to permit software handshaking
— Active: ICC = 15 mA (typical) at 55 ns
— Active: ICC = 25 mA (typical) at 35 ns
— Standby: ISB3 = 2 µA (typical)
between ports
• Input Read Registers and Output Drive Registers
• INT flag for port-to-port communication
• Separate upper-byte and lower-byte control
• Industrial temperature ranges
• Small footprint: Available in a 6x6 mm 100-pin
Lead(Pb)-free fBGA
• Supports 1.8V, 2.5V, and 3.0V I/Os
Selection Guide for 1.8V
CYDM256A16, CYDM128A16,
CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
CYDM064A08
CYDM064A16, CYDM128A08,
CYDM064A08
-35
-55
Unit
ns
mA
µA
Maximum Access Time
35
25
2
55
15
2
Typical Operating Current
Typical Standby Current for ISB1
Typical Standby Current for ISB3
2
2
µA
Selection Guide for 2.5V
CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
CYDM064A08
CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
CYDM064A08
-35
-55
Unit
ns
mA
µA
Maximum Access Time
35
39
6
55
28
6
Typical Operating Current
Typical Standby Current for ISB1
Typical Standby Current for ISB3
4
4
µA
Selection Guide for 3.0V
CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
CYDM064A08
CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
CYDM064A08
-35
-55
Unit
ns
mA
µA
Maximum Access Time
35
49
7
55
42
7
Typical Operating Current
Typical Standby Current for ISB1
Typical Standby Current for ISB3
6
6
µA
Cypress Semiconductor Corporation
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Document #: 38-06081 Rev. *F
Revised October 31, 2005