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CYD18S72V-133BBI PDF预览

CYD18S72V-133BBI

更新时间: 2024-09-18 03:27:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
25页 696K
描述
FLEx72⑩ 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM

CYD18S72V-133BBI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:23 X 23 MM, 1 MM, MO-192, FBGA-484针数:484
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:8.51
Is Samacsys:N最长访问时间:5 ns
其他特性:PIPELINED ARCHITECTURE OR FLOW-THROUGH最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMONJESD-30 代码:S-PBGA-B484
JESD-609代码:e0长度:23 mm
内存密度:18874368 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:72湿度敏感等级:3
功能数量:1端口数量:2
端子数量:484字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX72输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA484,22X22,40封装形状:SQUARE
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):220电源:3.3 V
认证状态:Not Qualified座面最大高度:1.9 mm
最大待机电流:0.075 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.58 mA
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:23 mm
Base Number Matches:1

CYD18S72V-133BBI 数据手册

 浏览型号CYD18S72V-133BBI的Datasheet PDF文件第2页浏览型号CYD18S72V-133BBI的Datasheet PDF文件第3页浏览型号CYD18S72V-133BBI的Datasheet PDF文件第4页浏览型号CYD18S72V-133BBI的Datasheet PDF文件第5页浏览型号CYD18S72V-133BBI的Datasheet PDF文件第6页浏览型号CYD18S72V-133BBI的Datasheet PDF文件第7页 
CYD04S72V  
CYD09S72V  
CYD18S72V  
FLEx72™ 3.3V 64K/128K/256K x 72  
Synchronous Dual-Port RAM  
Features  
Functional Description  
• True dual-ported memory cells that allow simultaneous  
The FLEx72 family includes 4-Mbit, 9-Mbit and 18-Mbit  
pipelined, synchronous, true dual-port static RAMs that are  
high-speed, low-power 3.3V CMOS. Two ports are provided,  
permitting independent, simultaneous access to any location  
in memory. The result of writing to the same location by more  
than one port at the same time is undefined. Registers on  
control, address, and data lines allow for minimal set-up and  
hold time.  
During a Read operation, data is registered for decreased  
cycle time. Each port contains a burst counter on the input  
address register. After externally loading the counter with the  
initial address, the counter will increment the address inter-  
nally (more details to follow). The internal write pulse width is  
independent of the duration of the R/W input signal. The  
internal write pulse is self-timed to allow the shortest possible  
cycle times.  
A HIGH on CE0 or LOW on CE1 for one clock cycle will power  
down the internal circuitry to reduce the static power  
consumption. One cycle with chip enables asserted is required  
to reactivate the outputs.  
Additional features include: readback of burst-counter internal  
address value on address lines, counter-mask registers to  
control the counter wrap-around, counter interrupt (CNTINT)  
flags, readback of mask register value on address lines,  
retransmit functionality, interrupt flags for message passing,  
JTAG for boundary scan, and asynchronous Master Reset  
(MRST).  
access of the same memory location  
• Synchronous pipelined operation  
• Family of 4-Mbit, 9-Mbit, and 18-Mbit devices  
• Pipelined output mode allows fast operation  
• 0.18-micron CMOS for optimum speed and power  
• High-speed clock to data access  
• 3.3V low power  
— Active as low as 225 mA (typ)  
— Standby as low as 55 mA (typ)  
• Mailbox function for message passing  
• Global master reset  
• Separate byte enables on both ports  
• Commercial and industrial temperature ranges  
• IEEE 1149.1-compatible JTAG boundary scan  
• 484-ball FBGA (1-mm pitch)  
• Pb-Free packaging available  
• Counter wrap around control  
— Internal mask register controls counter wrap-around  
— Counter-interrupt flags to indicate wrap-around  
— Memory block retransmit operation  
• Counter readback on address lines  
• Mask register readback on address lines  
The CYD18S72V device have limited features. Please see  
“Address Counter and Mask Register Operations[17]” on  
page 6“ for details.  
• Dual Chip Enables on both ports for easy depth  
Seamless Migration to Next-Generation Dual-Port Family  
expansion  
Cypress offers a migration path for all devices to the  
next-generation devices in the Dual-Port family with a  
compatible footprint. Please contact Cypress Sales for more  
details.  
• Seamless Migration to Next Generation Dual-Port  
Family  
Table 1. Product Selection Guide  
4-Mbit  
9-Mbit  
18-Mbit  
Density  
(64K x 72)  
CYD04S72V  
167  
(128K x 72)  
(256K x 72)  
Part Number  
Max. Speed (MHz)  
CYD09S72V  
CYD18S72V  
167  
4.0  
270  
133  
5.0  
410  
Max. Access Time—Clock to Data (ns)  
Typical operating current (mA)  
Package  
4.0  
225  
484-ball FBGA  
484-ball FBGA  
484-ball FBGA  
23 mm x 23 mm  
23 mm x 23 mm  
23 mm x 23 mm  
Cypress Semiconductor Corporation  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Document #: 38-06069 Rev. *I  
Revised May 2, 2006  
[+] Feedback  

CYD18S72V-133BBI 替代型号

型号 品牌 替代类型 描述 数据表
CYD18S72V18-200BGXI CYPRESS

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FullFlex Synchronous SDR Dual Port SRAM Commercial and Industrial temperature
CYD18S72V18-167BGI CYPRESS

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FullFlex Synchronous SDR Dual Port SRAM Commercial and Industrial temperature
CYD18S72V-100BBI CYPRESS

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FLEx72 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM

与CYD18S72V-133BBI相关器件

型号 品牌 获取价格 描述 数据表
CYD18S72V-133BBXC CYPRESS

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FLEx72⑩ 3.3V 64K/128K/256K x 72 Synchronous D
CYD18S72V18 CYPRESS

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FullFlex Synchronous SDR Dual Port SRAM
CYD18S72V18-167BBC CYPRESS

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Dual-Port SRAM, 256KX72, 4ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, PLAST
CYD18S72V18-167BBXC CYPRESS

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Dual-Port SRAM, 256KX72, 4ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, LEAD
CYD18S72V18-167BBXI ROCHESTER

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256KX72 DUAL-PORT SRAM, 4ns, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, LEAD FREE, P
CYD18S72V18-167BBXI CYPRESS

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Dual-Port SRAM, 256KX72, 4ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, LEAD
CYD18S72V18-167BGC CYPRESS

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FullFlex Synchronous SDR Dual Port SRAM Commercial and Industrial temperature
CYD18S72V18-167BGC ROCHESTER

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256KX72 DUAL-PORT SRAM, 4ns, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, PLASTIC, BGA
CYD18S72V18-167BGI CYPRESS

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FullFlex Synchronous SDR Dual Port SRAM Commercial and Industrial temperature
CYD18S72V18-167BGI ROCHESTER

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256KX72 DUAL-PORT SRAM, 4ns, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, PLASTIC, BGA