Datasheet > 存储 > SRAM> CYD18S72V-100BBXI

CYD18S72V-100BBXI

更新时间： 2024-11-27 03:27:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器时钟
页数	文件大小	规格书
25页	696K
描述
FLEx72⑩ 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM

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CYD18S72V-100BBXI 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	BGA
包装说明：	BGA, BGA484,22X22,40	针数：	484
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.54
Is Samacsys：	N	最长访问时间：	5.2 ns
其他特性：	PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE	最大时钟频率 (fCLK)：	100 MHz
I/O 类型：	COMMON	JESD-30 代码：	S-PBGA-B484
JESD-609代码：	e1	长度：	23 mm
内存密度：	18874368 bit	内存集成电路类型：	DUAL-PORT SRAM
内存宽度：	72	湿度敏感等级：	3
功能数量：	1	端口数量：	2
端子数量：	484	字数：	262144 words
字数代码：	256000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	256KX72	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	BGA
封装等效代码：	BGA484,22X22,40	封装形状：	SQUARE
封装形式：	GRID ARRAY	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	电源：	3.3 V
认证状态：	Not Qualified	座面最大高度：	1.9 mm
最大待机电流：	0.075 A	最小待机电流：	3.14 V
子类别：	SRAMs	最大压摆率：	0.45 mA
最大供电电压 (Vsup)：	3.465 V	最小供电电压 (Vsup)：	3.135 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	20	宽度：	23 mm
Base Number Matches：	1

CYD18S72V-100BBXI 数据手册

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CYD04S72V

CYD09S72V

CYD18S72V

FLEx72™ 3.3V 64K/128K/256K x 72

Synchronous Dual-Port RAM

Features

Functional Description

• True dual-ported memory cells that allow simultaneous

The FLEx72 family includes 4-Mbit, 9-Mbit and 18-Mbit

pipelined, synchronous, true dual-port static RAMs that are

high-speed, low-power 3.3V CMOS. Two ports are provided,

permitting independent, simultaneous access to any location

in memory. The result of writing to the same location by more

than one port at the same time is undefined. Registers on

control, address, and data lines allow for minimal set-up and

hold time.

During a Read operation, data is registered for decreased

cycle time. Each port contains a burst counter on the input

address register. After externally loading the counter with the

initial address, the counter will increment the address inter-

nally (more details to follow). The internal write pulse width is

independent of the duration of the R/W input signal. The

internal write pulse is self-timed to allow the shortest possible

cycle times.

A HIGH on CE0 or LOW on CE1 for one clock cycle will power

down the internal circuitry to reduce the static power

consumption. One cycle with chip enables asserted is required

to reactivate the outputs.

Additional features include: readback of burst-counter internal

address value on address lines, counter-mask registers to

control the counter wrap-around, counter interrupt (CNTINT)

flags, readback of mask register value on address lines,

retransmit functionality, interrupt flags for message passing,

JTAG for boundary scan, and asynchronous Master Reset

(MRST).

access of the same memory location

• Synchronous pipelined operation

• Family of 4-Mbit, 9-Mbit, and 18-Mbit devices

• Pipelined output mode allows fast operation

• 0.18-micron CMOS for optimum speed and power

• High-speed clock to data access

• 3.3V low power

— Active as low as 225 mA (typ)

— Standby as low as 55 mA (typ)

• Mailbox function for message passing

• Global master reset

• Separate byte enables on both ports

• Commercial and industrial temperature ranges

• IEEE 1149.1-compatible JTAG boundary scan

• 484-ball FBGA (1-mm pitch)

• Pb-Free packaging available

• Counter wrap around control

— Internal mask register controls counter wrap-around

— Counter-interrupt flags to indicate wrap-around

— Memory block retransmit operation

• Counter readback on address lines

• Mask register readback on address lines

The CYD18S72V device have limited features. Please see

“Address Counter and Mask Register Operations^[17]” on

page 6“ for details.

• Dual Chip Enables on both ports for easy depth

Seamless Migration to Next-Generation Dual-Port Family

expansion

Cypress offers a migration path for all devices to the

next-generation devices in the Dual-Port family with a

compatible footprint. Please contact Cypress Sales for more

details.

• Seamless Migration to Next Generation Dual-Port

Family

Table 1. Product Selection Guide

4-Mbit

9-Mbit

18-Mbit

Density

(64K x 72)

CYD04S72V

167

(128K x 72)

(256K x 72)

Part Number

Max. Speed (MHz)

CYD09S72V

CYD18S72V

167

4.0

270

133

5.0

410

Max. Access Time—Clock to Data (ns)

Typical operating current (mA)

Package

4.0

225

484-ball FBGA

23 mm x 23 mm

Cypress Semiconductor Corporation

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document #: 38-06069 Rev. *I

Revised May 2, 2006

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与CYD18S72V-100BBXI相关器件

型号	品牌	获取价格	描述	数据表
CYD18S72V-133BBC	CYPRESS	获取价格	FLEx72 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM
CYD18S72V-133BBI	CYPRESS	获取价格	FLEx72⑩ 3.3V 64K/128K/256K x 72 Synchronous D
CYD18S72V-133BBXC	CYPRESS	获取价格	FLEx72⑩ 3.3V 64K/128K/256K x 72 Synchronous D
CYD18S72V18	CYPRESS	获取价格	FullFlex Synchronous SDR Dual Port SRAM
CYD18S72V18-167BBC	CYPRESS	获取价格	Dual-Port SRAM, 256KX72, 4ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, PLAST
CYD18S72V18-167BBXC	CYPRESS	获取价格	Dual-Port SRAM, 256KX72, 4ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, LEAD
CYD18S72V18-167BBXI	ROCHESTER	获取价格	256KX72 DUAL-PORT SRAM, 4ns, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, LEAD FREE, P
CYD18S72V18-167BBXI	CYPRESS	获取价格	Dual-Port SRAM, 256KX72, 4ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, LEAD
CYD18S72V18-167BGC	CYPRESS	获取价格	FullFlex Synchronous SDR Dual Port SRAM Commercial and Industrial temperature
CYD18S72V18-167BGC	ROCHESTER	获取价格	256KX72 DUAL-PORT SRAM, 4ns, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, PLASTIC, BGA

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