Datasheet > CY7S1049GE30-10VXIT

CY7S1049GE30-10VXIT

更新时间： 2024-11-07 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		静态存储器
页数	文件大小	规格书
21页	553K
描述
Asynchronous SRAM

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CY7S1049G

CY7S1049GE

4-Mbit (512K words × 8-bit) Static RAM

with PowerSnooze™

and Error Correcting Code (ECC)

4-Mbit (512K words

× 8-bit) Static RAM with PowerSnooze™ and Error Correcting Code (ECC)

ultra-low power Deep-Sleep mode^[3]. With Deep-Sleep mode

currents as low as 15 µA, the CY7S1049G/CY7S1049GE

devices combine the best features of fast and low- power SRAMs

in industry-standard package options. The device also features

embedded ECC. logic which can detect and correct single-bit

errors in the accessed location.

Features

■ High speed

❐ Access time (t_AA) = 10 ns / 15 ns

■ Ultra-low power Deep-Sleep (DS) current

❐ I_DS= 15 µA

Deep-Sleep input (DS) must be deasserted HIGH for normal

operating mode.

■ Low active and standby currents

❐ Active Current I_CC= 38-mA typical

❐ Standby Current I_SB2= 6-mA typical

To perform data writes, assert the Chip Enable (CE) and Write

Enable (WE) inputs LOW, and provide the data and address on

device data pins (I/O₀through I/O₇) and address pins (A₀

through A₁₈) respectively.

■ Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V,

4.5 V to 5.5 V

■ Embedded ECC for single-bit error correction^{[1, 2]}

To perform data reads, assert the Chip Enable (CE) and Output

Enable (OE) inputs LOW and provide the required address on

the address lines. Read data is accessible on the I/O lines (I/O₀

through I/O₇).

■ Error indication (ERR) pin to indicate 1-bit error detection and

correction

■ 1.0-V data retention

The device is placed in a low-power Deep-Sleep mode when the

Deep-Sleep input (DS) is asserted LOW. In this state, the device

is disabled for normal operation and is placed in a low power data

retention mode. The device can be activated by deasserting the

Deep-Sleep input (DS) to HIGH.

■ TTL- compatible inputs and outputs

■ Available in Pb-free 44-pin TSOP II, and 36-pin (400-mil)

molded SOJ

Functional Description

The CY7S1049G/CY7S1049GE^[1]is

PowerSnooze™ static RAM organized as 512K words × 8 bits.

This device features fast access times (10 ns) and a unique

The CY7S1049G is available in 44-pin TSOP II, and 36-pin

Molded SOJ (400 Mils).

high-performance

Product Portfolio

Power Dissipation

Operating I_CC

Speed

(ns)

Standby, I_SB2

Deep-Sleep

current (µA)

Product^[4]

Range

V_CCRange (V)

(mA)

f = f_max

Typ ^[5]Max Typ ^[5]Max Typ ^[5]Max

CY7S1049G(E)18 Industrial

CY7S1049G(E)30

1.65 V–2.2 V

2.2 V–3.6 V

4.5–5.5 V

–

CY7S1049G(E)

Notes

1. This device does not support automatic write back on error detection.

2. SER FIT Rate <0.1 FIT/Mb. Refer AN88889 for details.

3. Refer AN89371 for details on PowerSnooze™ feature.

4. ERR pin is available only for devices which have ERR option “E” in the ordering code. Refer Ordering Information on page 17 for details.

5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V = 1.8 V (for V range of 1.65 V–2.2 V), V = 3 V

(for V range of 2.2 V–3.6 V), and V = 5 V (for V range of 4.5 V–5.5 V), T = 25 °C.

Cypress Semiconductor Corporation

Document Number: 001-95414 Rev. *F

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised April 3, 2018

12 3 4 5 6 7...21

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CY7S1061G30-10BVXI	CYPRESS	获取价格	16-Mbit (1 M words Ã 16 bit) Static RAM with
CY7S1061G30-10BVXI	INFINEON	获取价格	Asynchronous SRAM
CY7S1061G30-10BVXIT	CYPRESS	获取价格	16-Mbit (1 M words Ã 16 bit) Static RAM with
CY7S1061G30-10BVXIT	INFINEON	获取价格	Asynchronous SRAM
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