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CY7C454-30JC PDF预览

CY7C454-30JC

更新时间: 2024-11-19 04:10:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路先进先出芯片时钟
页数 文件大小 规格书
24页 354K
描述
512x9 2Kx9 and 4Kx9 Cascadable Clocked FIFOs with Programmable

CY7C454-30JC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFJ包装说明:PLASTIC, LCC-32
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.92Is Samacsys:N
最长访问时间:20 ns其他特性:RETRANSMIT
最大时钟频率 (fCLK):33.3 MHz周期时间:30 ns
JESD-30 代码:R-PQCC-J32JESD-609代码:e0
长度:13.97 mm内存密度:36864 bit
内存集成电路类型:OTHER FIFO内存宽度:9
功能数量:1端子数量:32
字数:4096 words字数代码:4000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4KX9
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:3.55 mm
最大待机电流:0.03 A子类别:FIFOs
最大压摆率:0.1 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:11.43 mmBase Number Matches:1

CY7C454-30JC 数据手册

 浏览型号CY7C454-30JC的Datasheet PDF文件第2页浏览型号CY7C454-30JC的Datasheet PDF文件第3页浏览型号CY7C454-30JC的Datasheet PDF文件第4页浏览型号CY7C454-30JC的Datasheet PDF文件第5页浏览型号CY7C454-30JC的Datasheet PDF文件第6页浏览型号CY7C454-30JC的Datasheet PDF文件第7页 
54  
CY7C451  
CY7C453  
CY7C454  
512x9, 2Kx9, and 4Kx9 Cascadable  
Clocked FIFOs with Programmable  
and write interfaces. Both FIFOs are 9 bits wide. The  
CY7C451 has a 512-word by 9-bit memory array, the  
CY7C453 has a 2048-word by 9-bit memory array, and the  
CY7C454 has a 4096-word by 9-bit memory array. Devices  
can be cascaded to increase FIFO depth. Programmable fea-  
tures include Almost Full/Empty flags and generation/checking  
of parity. These FIFOs provide solutions for a wide variety of data  
buffering needs, including high-speed data acquisition, multiproces-  
sor interfaces, and communications buffering.  
Features  
• High-speed, low-power, first-in first-out (FIFO)  
memories  
• 512 x 9 (CY7C451)  
• 2,048 x 9 (CY7C453)  
• 4,096 x 9 (CY7C454)  
• 0.65 micron CMOS for optimum speed/power  
• High-speed 83-MHz operation (12 ns read/write cycle  
time)  
Both FIFOs have 9-bit input and output ports that are con-  
trolled by separate clock and enable signals. The input port is  
controlled by a free-running clock (CKW) and a write enable  
pin (ENW). When ENW is asserted, data is written into the FIFO on  
the rising edge of the CKW signal. While ENW is held active, data is  
continually written into the FIFO on each CKW cycle. The output port  
is controlled in a similar manner by a free-running read clock (CKR)  
and a read enable pin (ENR). The read (CKR) and write (CKW)  
clocks may be tied together for single-clock operation or the two  
clocks may be run independently for asynchronous read/write appli-  
cations. Clock frequencies up to 83.3 MHz are achievable in the stan-  
dalone configuration, and up to 83.3 MHz is achievable when FIFOs  
are cascaded for depth expansion.  
• Low power — ICC=70 mA  
• Fully asynchronous and simultaneous read and write  
operation  
• Empty, Full, HalfFull, andprogrammableAlmostEmpty  
and Almost Full status flags  
• TTL compatible  
• Retransmit function  
• Parity generation/checking  
• Output Enable (OE) pins  
• Independent read and write enable pins  
• Center power and ground pins for reduced noise  
• Supports free-running 50% duty cycle clock inputs  
• Width Expansion Capability  
Depth expansion is possible using the cascade input (XI) and  
cascade output (XO). The XOsignal is connected to the XI of the next  
device, and the XO of the last device should be connected to the XI  
of the first device. In standalone mode, the input (XI) pin is simply tied  
• Depth Expansion Capability  
• Available in PLCC packages  
to VSS  
.
In the standalone and width expansion configurations, a LOW  
on the retransmit (RT) input causes the FIFOs to retransmit  
the data. Read enable (ENR) and the write enable (ENW) must  
both be HIGH during the retransmit, and then ENR is used to  
access the data.  
Functional Description  
The CY7C451, CY7C453, and CY7C454 are high-speed,  
low-power, first-in first-out (FIFO) memories with clocked read  
D
08  
Logic Block Diagram  
Pin Configurations  
INPUT  
REGISTER  
PLCC/LCC  
Top View  
CKW  
ENW  
D
D
D D D D D  
2 3 4 5 6  
0
1
FLAG/PARITY  
PROGRAM  
REGISTER  
4
3
2
1 32 31 30  
29  
PARITY  
XI  
ENW  
CKW  
D
D
FL/RT  
MR  
7
8
WRITE  
5
6
7
8
CONTROL  
28  
27  
26  
25  
24  
23  
22  
21  
V
7C451  
7C453  
7C454  
CC  
HF  
E/F  
PAFE/XO  
FLAG  
LOGIC  
V
SS  
V
SS  
9
HF  
E/F  
CKR  
ENR  
OE  
10  
11  
12  
13  
RAM  
ARRAY  
512x9  
2048x9  
4096x9  
PAFE/XO  
Q
Q
READ  
POINTER  
WRITE  
POINTER  
/PG/PE  
8
0
14 15 16 17 1819 20  
Q Q Q Q Q Q Q  
7
1
2
3
4
5
6
MR  
C451-2  
RESET  
LOGIC  
FL/RT  
TRISTATE  
OUTPUT REGISTER  
READ  
CONTROL  
EXPANSION  
LOGIC  
XI  
OE  
RETRANSMIT  
LOGIC  
Q
Q /PG/PE  
8
CKR  
ENR  
C451-1  
07,  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-06033 Rev. *A  
Revised December 27, 2002  

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