Datasheet > 存储 > SRAM> CY7C2570KV18-550BZC

CY7C2570KV18-550BZC

更新时间： 2024-11-05 06:51:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		内存集成电路静态存储器双倍数据速率
页数	文件大小	规格书
28页	817K
描述
72-Mbit DDR-II+ SRAM 2-Word Burst Architecture

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技术参数
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CY7C2570KV18-550BZC 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.26	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	550 MHz
I/O 类型：	COMMON	JESD-30 代码：	R-PBGA-B165
长度：	15 mm	内存密度：	75497472 bit
内存集成电路类型：	DDR SRAM	内存宽度：	36
功能数量：	1	端子数量：	165
字数：	2097152 words	字数代码：	2000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	2MX36
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装等效代码：	BGA165,11X15,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE
并行/串行：	PARALLEL	电源：	1.5/1.8,1.8 V
认证状态：	Not Qualified	座面最大高度：	1.4 mm
最大待机电流：	0.38 A	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	0.97 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	宽度：	13 mm
Base Number Matches：	1

CY7C2570KV18-550BZC 数据手册

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CY7C2566KV18, CY7C2577KV18

CY7C2568KV18, CY7C2570KV18

PRELIMINARY

72-Mbit DDR-II+ SRAM 2-Word Burst

Architecture (2.5 Cycle Read Latency) with ODT

Features

Configurations

■ 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)

■ 550 MHz clock for high bandwidth

With Read Cycle Latency of 2.5 cycles:

CY7C2566KV18 – 8M x 8

CY7C2577KV18 – 8M x 9

■ 2-word burst for reducing address bus frequency

CY7C2568KV18 – 4M x 18

CY7C2570KV18 – 2M x 36

■ Double Data Rate (DDR) interfaces

(data transferred at 1100 MHz) at 550 MHz

■ Available in 2.5 clock cycle latency

Functional Description

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

The CY7C2566KV18, CY7C2577KV18, CY7C2568KV18, and

CY7C2570KV18 are 1.8V Synchronous Pipelined SRAMs

equipped with DDR-II+ architecture. The DDR-II+ consists of an

SRAM core with advanced synchronous peripheral circuitry.

Addresses for read and write are latched on alternate rising

edges of the input (K) clock. Write data is registered on the rising

edges of both K and K. Read data is driven on the rising edges

of K and K. Each address location is associated with two 8-bit

words (CY7C2566KV18), 9-bit words (CY7C2577KV18), 18-bit

words (CY7C2568KV18), or 36-bit words (CY7C2570KV18) that

burst sequentially into or out of the device.

■ Echo clocks (CQ and CQ) simplify data capture in high speed

systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ On-Die Termination (ODT) feature

❐ Supported for D_[x:0], BWS_[x:0], and K/K inputs

■ Synchronous internally self-timed writes

■ DDR-II+ operates with 2.5 cycle read latency when DOFF is

asserted HIGH

These devices have an On-Die Termination feature supported

for D_[x:0], BWS_[x:0], and K/K inputs, which helps eliminate

external termination resistors, reduce cost, reduce board area,

and simplify board routing.

■ Operates similar to DDR-I device with 1 cycle read latency

when DOFF is asserted LOW

[1]

Asynchronous inputs include an output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs D) are tightly matched to the two

output echo clocks CQ/CQ, eliminating the need for separately

capturing data from each individual DDR SRAM in the system

design.

■ Core V_DD= 1.8V ± 0.1V; IO V_DDQ= 1.4V to V_DD

❐ Supports both 1.5V and 1.8V IO supply

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

■ Phase Locked Loop (PLL) for accurate data placement

Table 1. Selection Guide

Description

Maximum Operating Frequency

Maximum Operating Current

550 MHz

500 MHz

500

450 MHz

450

400 MHz

400

Unit

MHz

550

740

760

970

690

630

580

690

630

580

x18

x36

700

650

590

890

820

750

Note

1. The Cypress QDR-II+ devices surpass the QDR consortium specification and can support V

= 1.4V to V

DDQ

Cypress Semiconductor Corporation

Document Number: 001-15889 Rev. *D

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised April 24, 2009

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与CY7C2570KV18-550BZC相关器件

型号	品牌	获取价格	描述	数据表
CY7C2570KV18-550BZI	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C2570KV18-550BZXC	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C2570KV18-550BZXI	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C2570XV18	CYPRESS	获取价格	72-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CY7C2570XV18-600BZXC	CYPRESS	获取价格	72-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CY7C2570XV18-633BZXC	CYPRESS	获取价格	72-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CY7C2570XV18-633BZXC	INFINEON	获取价格	DDR-II+ CIO
CY7C2576KV18	CYPRESS	获取价格	72-Mbit QDR-II+ SRAM 4-Word Burst Architecture
CY7C2576KV18-400BZC	CYPRESS	获取价格	72-Mbit QDR-II+ SRAM 4-Word Burst Architecture
CY7C2576KV18-400BZI	CYPRESS	获取价格	72-Mbit QDR-II+ SRAM 4-Word Burst Architecture

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