Datasheet > CY7C25702KV18-550BZXC

CY7C25702KV18-550BZXC

更新时间： 2024-11-06 14:56:23

品牌	Logo	应用领域
英飞凌 - INFINEON		时钟双倍数据速率静态存储器内存集成电路
页数	文件大小	规格书
29页	873K
描述
DDR-II+ CIO

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CY7C25682KV18

CY7C25702KV18

72-Mbit DDR II+ SRAM Two-Word Burst Architecture

(2.5 Cycle Read Latency) with ODT

72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Features

Configurations

■ 72-Mbit density (4M × 18, 2M × 36)

With Read Cycle Latency of 2.5 cycles:

CY7C25682KV18 – 4M × 18

■ 550 MHz clock for high bandwidth

CY7C25702KV18 – 2M × 36

■ Two-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces (data transferred at

1100 MHz) at 550 MHz

Functional Description

The CY7C25682KV18, and CY7C25702KV18 are 1.8 V

Synchronous Pipelined SRAMs equipped with DDR II+

architecture. The DDR II+ consists of an SRAM core with

advanced synchronous peripheral circuitry. Addresses for read

and write are latched on alternate rising edges of the input (K)

clock. Write data is registered on the rising edges of both K and

K. Read data is driven on the rising edges of K and K. Each

address location is associated with two 18-bit words

(CY7C25682KV18), or 36-bit words (CY7C25702KV18) that

burst sequentially into or out of the device.

■ Available in 2.5 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Echo Clocks (CQ and CQ) simplify data capture in high speed

systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ On-die termination (ODT) feature

❐ Supported for D_[x:0], BWS_[x:0], and K/K inputs

These devices have an On-Die Termination feature supported

for D_[x:0], BWS_[x:0], and K/K inputs, which helps eliminate

external termination resistors, reduce cost, reduce board area,

and simplify board routing.

■ Synchronous internally self-timed writes

■ DDR II+ operates with 2.5 cycle read latency when DOFF is

asserted HIGH

Asynchronous inputs include an output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs D) are tightly matched to the two

output echo clocks CQ/CQ, eliminating the need for separately

capturing data from each individual DDR SRAM in the system

design.

■ Operates similar to DDR I Device with 1 cycle read latency

when DOFF is asserted LOW

[1]

■ Core V_DD= 1.8 V ± 0.1 V; I/O V_DDQ= 1.4 V to V_DD

❐ Supports both 1.5 V and 1.8 V I/O supply

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

For a complete list of related documentation, click here.

■ Phase-locked loop (PLL) for accurate data placement

Selection Guide

Description

Maximum Operating Frequency

Maximum Operating Current

550 MHz

550

500 MHz

500

450 MHz

450

400 MHz Unit

400

590

750

MHz

× 18

× 36

760

700

650

970

890

820

Note

1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V

= 1.4 V to V

DDQ

Cypress Semiconductor Corporation

Document Number: 001-66483 Rev. *F

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised March 11, 2016

12 3 4 5 6 7...29

中文翻译

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与CY7C25702KV18-550BZXC相关器件

型号	品牌	获取价格	描述	数据表
CY7C25702KV18-550BZXI	CYPRESS	获取价格	72-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CY7C25702KV18-550BZXI	INFINEON	获取价格	DDR-II+ CIO
CY7C2570KV18	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C2570KV18-400BZC	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C2570KV18-400BZI	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C2570KV18-400BZXC	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C2570KV18-400BZXI	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C2570KV18-450BZC	ROCHESTER	获取价格	2MX36 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
CY7C2570KV18-450BZC	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C2570KV18-450BZI	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture

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